NT5CC256M16CP-DIB1 vs K4A8G165WB-BCPB 对比
详细并排对比 NT5CC256M16CP-DIB1 出自 Nanya Technology 和 K4A8G165WB-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5CC256M16CP-DIB1 | K4A8G165WB-BCPB |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.00 | $2.30 |
| 存储器类型 | DDR3L SDRAM | — |
| Density | 4Gb | 8 Gb |
| 存储组织 | 256M x 16 | 512M x 16 |
| 电源电压 | 1.35V | 1.2 V (1.14 V to 1.26 V) |
| 数据速率 | 1600Mbps (DDR3L-1600) | — |
| 封装 | TFBGA-96, 9x13mm, 0.8mm pitch | 96-ball FBGA (TFBGA-96) |
| Number of Banks | 8 | — |
| CAS Latency (CL) | 11 | — |
| Write Latency (CWL) | 8 | — |
| tRCD/tRP | 11 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | 8 (BL8) |
| 工作温度 | 0C to +95C (Tcase) | 0°C to 85°C |
| RoHS | Compliant | — |
| 无卤 | Yes | — |
| Lead Free | Yes | — |
| Speed Grade | — | 2133 Mbps (PC4-17000) |
| Burst Type | — | Sequential and Interleave |
| CAS 延迟 | — | Programmable (e.g., 15, 16, 18) |
| Refresh | — | Auto and Self Refresh |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Package Shape | — | RECTANGULAR |
| Terminal Position | — | BOTTOM |
| RoHS 状态 | — | Compliant |