NVMFS5C430NWF vs BSC014N04LSIATMA1 Comparison

Detailed side-by-side comparison of NVMFS5C430NWF by onsemi and BSC014N04LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 ✓ Active

Specification Comparison

Parameter NVMFS5C430NWF BSC014N04LSIATMA1
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.39
Transistor Type N-Channel Power MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) 185 A —
RDS(on) Max @ VGS=10V [DATA_NEEDED: RDS(on) max at VGS=10V] —
RDS(on) Typical 1.7 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (QG) [DATA_NEEDED: total QG] —
Package DFN5 (5x6 mm) with Wettable Flanks PG-TDSON-8 FL (TDSON-8 with exposed drain pad)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55 C to +150 C
AEC-Q101 Qualified Yes —
PPAP Capable Yes —
RoHS Compliance Compliant —
Lead-Free / Halogen-Free Pb-Free (Halogen status not in data) —
Footprint 5x6 mm Small Outline —
Technology Trench Power MOSFET OptiMOS 5 (trench, thin-wafer)
MSL Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, Ta) — 31 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM rating]
RDS(on) max at VGS=10 V — 1.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc) — 96 W
Power Dissipation (PD, Ta) — 2.5 W
RoHS Status — Compliant
Tradename — OptiMOS

Datasheets & Resources

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