NVMFS5C430NWF - 40V 1.7mΩ 185A N-Channel MOSFET | onsemi
MPN: NVMFS5C430NWF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.98 | $980.00 |
| 3,000 | $0.82 | $2,460.00 |
NVMFS5C430NWF Overview
What is an N-Channel Power MOSFET? An N-Channel MOSFET is a voltage-controlled semiconductor switch whose drain-source channel is populated by electrons when the gate is biased above the threshold. Power MOSFETs belong to the broader family of discrete semiconductors, descending from signal MOSFETs and ancestors of the insulated-gate bipolar transistor (IGBT) for higher voltages. Within onsemi's portfolio, the NVMFS5C430N family targets low- to medium-voltage applications where high current density, low RDS(on), and small PCB footprint are critical design drivers.
Key features of the NVMFS5C430NWF include a typical RDS(on) of 1.7 mΩ at VGS=10 V, low total gate charge to reduce switching losses, and a 5x6 mm DFN5 footprint that cuts board area versus traditional DPAK packages. The wettable flank termination enables automatic optical inspection (AOI) of solder joints, a critical feature for automotive-grade quality control.
The part is AEC-Q101 qualified and PPAP capable, making it suitable for automotive electronics. It is also RoHS compliant and Pb-Free, satisfying modern environmental requirements. Its construction uses onsemi's standard power MOSFET process technology, balancing cell density with ruggedness.
Typical applications include 12 V automotive ECU loads, high-current synchronous buck converters, motor drive H-bridges, hot-swap circuits, and battery management systems where the wettable flank and AEC-Q101 qualification provide automotive-grade reliability.
When designing with this device, attention should be paid to gate drive voltage and PCB thermal layout. A VGS of 10 V ensures full RDS(on) optimization, while adequate copper pour on the drain pad is essential for heat dissipation at the 185 A current level.
Drop-in alternatives for NVMFS5C430NWF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with NVMFS5C430NWF (same form factor and footprint) — differing in Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
NVMFS5C430NLAFT1G
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
NVMFS5C430NWFT1G
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
NVMFS5C430NL
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
BSC014N04LSIATMA1
✅ Drop-In✓ In Stock
$0.39 / Unit
View Datasheet →SiR870DP
✅ Drop-In📋 Reference alternative (not in catalog)
NVMFS5C430NWF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 185 A |
| RDS(on) Typical | 1.7 mΩ |
| Package | DFN5 (5x6 mm) with Wettable Flanks |
| Mounting Type | Surface Mount |
| AEC-Q101 Qualified | Yes |
| PPAP Capable | Yes |
| RoHS Compliance | Compliant |
| Lead-Free / Halogen-Free | Pb-Free (Halogen status not in data) |
| Footprint | 5x6 mm Small Outline |
| Technology | Trench Power MOSFET |
NVMFS5C430NWF Pin Configuration
| Pin 1 | GATE — MOSFET gate drive input |
| Pin 2 | SOURCE — Source connection (low-side) |
| Pin 3 | SOURCE — Source connection (low-side) |
| Pin 4 | SOURCE — Source connection (low-side) |
| Pin 5 | SOURCE — Source connection (low-side) |
| Pin PAD | DRAIN — Drain connection via exposed thermal pad |
Safe Operating Area (SOA) - DC Continuous
Typical Applications
NVMFS5C430NWF is suitable for 6 applications: 12V Automotive ECU Load Switching, Synchronous Buck Converter High-Side FET, H-Bridge Motor Drive Stage, Hot-Swap / Inrush Current Limiter, Battery Management System (BMS) Protection FET, USB Type-C PD Power Path Switch.
12V Automotive ECU Load Switching
The NVMFS5C430NWF's 40 V VDS, 185 A ID, and AEC-Q101 qualification make it ideal for high-side/low-side load switching in 12 V automotive ECUs. Its 1.7 mΩ typical RDS(on) minimizes conduction loss when driving solenoids, injectors, or motors directly from the battery rail, while the wettable flank package supports AOI-based solder inspection required in automotive manufacturing lines.
Recommended
Synchronous Buck Converter High-Side FET
In 12 V-input synchronous buck converters, the NVMFS5C430NWF can be used as the high-side control FET. Its low total gate charge reduces switching losses at high frequencies (up to ~500 kHz), while 40 V VDS provides headroom for transients on automotive 12 V buses. Pair with a smaller onsemi low-side MOSFET for a complete synchronous rectifier solution.
Recommended
H-Bridge Motor Drive Stage
The NVMFS5C430NWF suits half-bridge positions in brushed DC motor drives and BLDC inverter legs operating from 12-24 V batteries. Four devices form a complete H-bridge capable of switching tens of amps continuous. Its 5x6 mm DFN5 footprint allows compact PCB designs for robotics, e-bikes, and small traction drives where board area is at a premium.
Recommended
Hot-Swap / Inrush Current Limiter
In server and telecom 12 V/24 V hot-swap circuits, the NVMFS5C430NWF acts as the main disconnect FET. Its 185 A continuous rating and 1.7 mΩ RDS(on) keep voltage drop across the FET low during steady-state operation. The device's low thermal resistance ensures reliable operation during repeated inrush events where energy dissipation must be managed.
Recommended
Battery Management System (BMS) Protection FET
The NVMFS5C430NWF is well-suited as the charge/discharge protection FET in lithium-ion BMS modules. Its 40 V VDS handles series-stack voltages of up to 10S Li-ion configurations with margin. AEC-Q101 qualification enables deployment in EV and energy-storage battery packs where functional safety and long-term reliability are mandatory.
Recommended
USB Type-C PD Power Path Switch
In USB Type-C Power Delivery sink applications, the NVMFS5C430NWF handles the VBUS path switching at 20 V/5 A (100 W) levels. Its 40 V VDS comfortably exceeds USB-PD's 20 V maximum, and 1.7 mΩ RDS(on) keeps dissipation under 0.5 W at full load, eliminating the need for external heatsinks in compact laptop/tablet charger designs.
Recommended
Recommended Products Summary
Engineering reference data for NVMFS5C430NWF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | NVMFS5C430NLAFT1G | BSC014N04LSI | SiR870DP |
|---|---|---|---|---|
| Brand | onsemi | onsemi | Infineon | Vishay Intertechnology |
| Package | DFN5 (5x6 mm) | DFN5 (5x6 mm) - same | DFN5 (5x6 mm) - same | DFN5 (5x6 mm) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V |
| RDS(on) Typical @ VGS=10V | 1.7 mΩ | 1.7 mΩ | 1.4 mΩ | 1.8 mΩ |
| Wettable Flank | Yes (WF suffix) | No | Yes | Yes |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes |
| RoHS Compliant / Pb-Free | Yes | Yes | Yes | Yes |
| PPAP Capable | Yes | Yes | Yes | Yes |
Key Differentiators
- Wettable Flank Package for AOI (vs NVMFS5C430NLAFT1G)
- Lower RDS(on) Than Comparable Infineon Part (vs BSC014N04LSI)
- Lower RDS(on) vs Vishay SiR870DP (vs SiR870DP)
Design Notes
Estimated: At 1.7 mΩ RDS(on) and 50 A continuous drain current, conduction loss is P = I²R = (50)² × 0.0017 = 4.25 W. The DFN5 5x6 mm package requires substantial copper pour on the drain pad (recommended ≥ 1 square inch on outer layers) to keep junction temperature rise under 50°C above ambient. For 100 A+ applications, use multi-layer PCB with thermal vias under the exposed pad.
Layout the gate drive loop area to a minimum to prevent parasitic inductance from causing ringing at the gate. Keep the gate-driver-to-FET gate trace short (≤ 10 mm) and use a 10 Ω gate resistor to dampen oscillations. The source connection should be Kelvin-sensed back to the gate driver ground for clean gate drive signals at high di/dt switching.
Do not operate the NVMFS5C430NWF without VGS ≥ 10 V - at lower gate voltages the RDS(on) increases dramatically, causing thermal runaway at high currents. Also, ensure the wettable flank side of the package sits on a properly sized solder land pattern per the onsemi DFN5 land drawing; incorrect land patterns will cause solder joint opens during thermal cycling.
The exposed drain pad must be soldered to a PCB copper pour that extends beyond the pad by at least 3 mm on each side, with thermal vias (≥ 9 vias, 0.3 mm drill) connecting top and inner copper layers. This provides both electrical connection to the drain and the primary thermal dissipation path. Without adequate copper, the device will thermally limit at currents well below its 185 A rating.
Compliance Information
RoHS and Pb-Free status verified from onsemi datasheet features list. AEC-Q101 qualified per the datasheet feature bullets. REACH, halogen-free, and conflict-mineral status not explicitly stated in verified web data and marked unknown.
