RTAX250S-1LG624V vs RTAX2000S-1LG624V Comparison

Detailed side-by-side comparison of RTAX250S-1LG624V by Microchip Technology and RTAX2000S-1LG624V by Microchip Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Microchip Technology
RTAX250S-1LG624V RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip

RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip

RTAX250S-1LG624V ✓ Active
Microchip Technology
RTAX2000S-1LG624V RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V ✓ Active

Specification Comparison

Parameter RTAX250S-1LG624V RTAX2000S-1LG624V
Brand Microchip Technology Microchip Technology
Category FPGA & CPLD FPGA & CPLD
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $0.00
Family RTAX-S Radiation-Tolerant FPGA —
Equivalent Gate Count 250000 gates —
Configurable Logic Blocks (CLBs) 2816 21,504
Logic Cells 4224 —
I/Os 248 —
Core Supply Voltage 1.5 V nominal [DATA_NEEDED: core supply voltage]
Speed Grade -1 -1
Package CGA624 (LG624), 624-column ceramic column grid array CG624, 624-pin ceramic column grid array
Package Suffix V (leaded column finish) —
Operating Temperature -55C to +125C —
Technology CMOS, antifuse programmable —
Radiation Tolerance Radiation-tolerant (RTAX-S family, SEU-tolerant) [DATA_NEEDED: TID and SEU LET figures] —
Configuration Live at power-up, single chip, no boot PROM Single-chip, live at power-up (no boot device required)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL level] —
RoHS Status [DATA_NEEDED: RoHS status - ceramic space-grade package typically exempt] [DATA_NEEDED: RoHS status]
Lifecycle Status Active —
Equivalent System Gates — 2,000,000 gates
User I/Os (maximum, family) — Up to 684
Embedded Memory — Up to 540 kbits SRAM with optional EDAC protection
Total Ionizing Dose (TID), functional — 300 krad (Si)
Total Ionizing Dose (TID), parametric — 200 krad (Si)
SEU Immunity — Less than 1E-10 errors per bit-day
Programming Technology — One-time programmable antifuse, nonvolatile
Process Technology — Digital CMOS
Package Temperature Suffix — V (space/military screening variant)
Family Lineage — RTAX-S/SL, based on commercial Axcelerator family
Operating Temperature Range — [DATA_NEEDED: operating temperature range]

Datasheets & Resources

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