RTAX250S-1LG624V vs RTAX2000S-1LG624V Comparaison
Comparaison détaillée côte à côte de RTAX250S-1LG624V par Microchip Technology et RTAX2000S-1LG624V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip
RTAX250S-1LG624V ✓ ActifMicrochip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX250S-1LG624V | RTAX2000S-1LG624V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent Gate Count | 250000 gates | — |
| Configurable Logic Blocks (CLBs) | 2816 | 21,504 |
| Logic Cells | 4224 | — |
| I/Os | 248 | — |
| Core Supply Voltage | 1.5 V nominal | [DATA_NEEDED: core supply voltage] |
| Speed Grade | -1 | -1 |
| Boîtier | CGA624 (LG624), 624-column ceramic column grid array | CG624, 624-pin ceramic column grid array |
| Package Suffix | V (leaded column finish) | — |
| Température de fonctionnement | -55C to +125C | — |
| Technology | CMOS, antifuse programmable | — |
| Radiation Tolerance | Radiation-tolerant (RTAX-S family, SEU-tolerant) [DATA_NEEDED: TID and SEU LET figures] | — |
| Configuration | Live at power-up, single chip, no boot PROM | Single-chip, live at power-up (no boot device required) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL level] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status - ceramic space-grade package typically exempt] | [DATA_NEEDED: RoHS status] |
| Statut du cycle de vie | Active | — |
| Equivalent System Gates | — | 2,000,000 gates |
| User I/Os (maximum, family) | — | Up to 684 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC protection |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Programming Technology | — | One-time programmable antifuse, nonvolatile |
| Process Technology | — | Digital CMOS |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| Plage de température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |