RTAX250S-1LG624V vs RTAX2000S-1LG624V Vergleich
Detaillierter Direktvergleich von RTAX250S-1LG624V von Microchip Technology und RTAX2000S-1LG624V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip
RTAX250S-1LG624V ✓ AktivMicrochip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX250S-1LG624V | RTAX2000S-1LG624V |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent Gate Count | 250000 gates | — |
| Configurable Logic Blocks (CLBs) | 2816 | 21,504 |
| Logic Cells | 4224 | — |
| I/Os | 248 | — |
| Core Supply Voltage | 1.5 V nominal | [DATA_NEEDED: core supply voltage] |
| Speed Grade | -1 | -1 |
| Gehäuse | CGA624 (LG624), 624-column ceramic column grid array | CG624, 624-pin ceramic column grid array |
| Package Suffix | V (leaded column finish) | — |
| Betriebstemperatur | -55C to +125C | — |
| Technology | CMOS, antifuse programmable | — |
| Radiation Tolerance | Radiation-tolerant (RTAX-S family, SEU-tolerant) [DATA_NEEDED: TID and SEU LET figures] | — |
| Configuration | Live at power-up, single chip, no boot PROM | Single-chip, live at power-up (no boot device required) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status - ceramic space-grade package typically exempt] | [DATA_NEEDED: RoHS status] |
| Lebenszyklusstatus | Active | — |
| Equivalent System Gates | — | 2,000,000 gates |
| User I/Os (maximum, family) | — | Up to 684 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC protection |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Programming Technology | — | One-time programmable antifuse, nonvolatile |
| Process Technology | — | Digital CMOS |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |