RTAX250S-1LG624V vs RTAX2000S-1LG624V Comparação
Comparação detalhada lado a lado de RTAX250S-1LG624V por Microchip Technology e RTAX2000S-1LG624V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Microchip Technology
RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip
RTAX250S-1LG624V ✓ AtivoMicrochip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ AtivoComparação de especificações
| Parâmetro | RTAX250S-1LG624V | RTAX2000S-1LG624V |
|---|---|---|
| Marca | Microchip Technology | Microchip Technology |
| Categoria | FPGA & CPLD | FPGA & CPLD |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,00 | $0,00 |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent Gate Count | 250000 gates | — |
| Configurable Logic Blocks (CLBs) | 2816 | 21,504 |
| Logic Cells | 4224 | — |
| I/Os | 248 | — |
| Core Supply Voltage | 1.5 V nominal | [DATA_NEEDED: core supply voltage] |
| Speed Grade | -1 | -1 |
| Encapsulamento | CGA624 (LG624), 624-column ceramic column grid array | CG624, 624-pin ceramic column grid array |
| Package Suffix | V (leaded column finish) | — |
| Temperatura de operação | -55C to +125C | — |
| Technology | CMOS, antifuse programmable | — |
| Radiation Tolerance | Radiation-tolerant (RTAX-S family, SEU-tolerant) [DATA_NEEDED: TID and SEU LET figures] | — |
| Configuration | Live at power-up, single chip, no boot PROM | Single-chip, live at power-up (no boot device required) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | [DATA_NEEDED: RoHS status - ceramic space-grade package typically exempt] | [DATA_NEEDED: RoHS status] |
| Status do ciclo de vida | Active | — |
| Equivalent System Gates | — | 2,000,000 gates |
| User I/Os (maximum, family) | — | Up to 684 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC protection |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Programming Technology | — | One-time programmable antifuse, nonvolatile |
| Process Technology | — | Digital CMOS |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| Faixa de temperatura de operação | — | [DATA_NEEDED: operating temperature range] |