SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower
MPN: SM4036NHKP ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.38 | $3.80 |
| 100 | $0.31 | $31.00 |
| 500 | $0.26 | $130.00 |
| 1,000 | $0.22 | $220.00 |
| 3,000 | $0.19 | $570.00 |
SM4036NHKP Overview
An N-Channel Enhancement Mode MOSFET is a voltage-controlled semiconductor device in which a positive gate-to-source voltage creates an inversion layer (channel) that allows electron current to flow from drain to source. The 'enhancement' designation means the channel does not conduct at VGS=0 and must be enhanced by the gate bias. MOSFETs are the workhorse of modern power electronics because they switch at high speed, require minimal drive current, and exhibit low on-resistance (RDS(on)). N-Channel devices (carrying electron current) offer lower RDS(on) per unit silicon than P-Channel devices, making them the preferred choice in high-current, low-loss applications. N-Channel MOSFETs belong to the broader category of power MOSFETs, which sit under discrete semiconductors and serve as the switching element in nearly every power conversion topology.
Key features of the SM4036NHKP include very low on-resistance that minimizes conduction losses, fast switching speeds that reduce switching losses, and a 40V breakdown voltage suited to 12V and 24V bus rails. The PDFN-8 package exposes a large drain pad to the PCB, providing excellent thermal dissipation and enabling high continuous currents in a compact 5mm x 6mm footprint. Marking code '4036NH' on the device top allows easy identification after board assembly.
Internally, the SM4036NHKP uses Sinopower's proprietary trench MOSFET cell technology, which maximizes cell density and minimizes RDS(on) per unit area. The device is fully characterized for avalanche operation, providing ruggedness against unclamped inductive switching events commonly seen in motor and solenoid drive circuits.
Typical applications include high-current DC-DC buck and boost converters, brushless DC (BLDC) motor drives, battery protection circuits in power tools and e-bikes, and OR-ing / hot-swap switches in telecom and server power distribution units.
When designing with the SM4036NHKP, ensure the gate drive voltage reaches at least 10V to fully enhance the channel and achieve the rated low on-resistance. Use a gate resistor of 10-100 ohm to control switching transients and minimize ringing. The exposed drain pad must be soldered to a sufficient copper pour for thermal relief.
This page combines distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for SM4036NHKP — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with SM4036NHKP (same form factor and footprint) — differing in Package, RoHS Status, Operating Temperature Range, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
SM4036NHKPC
✅ Drop-In📋 Reference alternative (not in catalog)
AON7403
✅ Drop-In📋 Reference alternative (not in catalog)
DMN4030LSS
✅ Drop-In📋 Reference alternative (not in catalog)
IRFH7084TRPBF
✅ Drop-In✓ In Stock
$0.45 / Unit
View Datasheet →BSC0901NSATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →NVMTS0D4N04CL
✅ Drop-In📋 Reference alternative (not in catalog)
SM4036NHKP Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 80 A |
| Package | PDFN-8 (DFN5x6) 5x6 mm |
| Mounting Type | Surface Mount |
| Marking Code | 4036NH |
| Avalanche Rating | Yes (per datasheet) |
| RoHS Status | Compliant (per Sinopower product page) |
| Lead-Free | Yes |
SM4036NHKP Pin Configuration
| Pin 1 | S — Source (connected to source pad) |
| Pin 2 | S — Source (connected to source pad) |
| Pin 3 | S — Source (connected to source pad) |
| Pin 4 | G — Gate |
| Pin 5 | DNC — Do not connect (mechanical pin) |
| Pin 6 | DNC — Do not connect (mechanical pin) |
| Pin 7 | S — Source (connected to source pad) |
| Pin 8 | S — Source (connected to source pad) |
Safe Operating Area (DC)
Typical Applications
SM4036NHKP is suitable for 6 applications: High-Current DC-DC Buck Converters, Brushless DC (BLDC) Motor Drives, Battery Protection and Hot-Swap Circuits, LED Lighting Drivers, Power OR-ing and Redundancy Switches, Solar Microinverters and MPPT Stages.
High-Current DC-DC Buck Converters
The SM4036NHKP is well-suited as the low-side synchronous rectifier in 12V-input buck converters delivering 20-30A to point-of-load rails. Its 40V VDS rating provides ample headroom above the 12V nominal bus, while the PDFN-8 exposed drain tab allows direct PCB thermal dissipation. The 80A continuous current rating supports peak inductor currents in multiphase VRM topologies used in server and telecom DC-DC modules. Designers benefit from the low gate charge (Qg) that minimizes switching losses at 200-500 kHz operating frequencies, and the trench cell structure provides a low Figure-of-Merit (FOM = RDS(on) x Qg) compared to older planar MOSFET generations.
Recommended
Brushless DC (BLDC) Motor Drives
In 3-phase BLDC motor drives for power tools, e-bikes, and small appliances, the SM4036NHKP serves as the low-side FET in a 6-MOSFET bridge configuration. The 40V breakdown is appropriate for 12-24V battery packs, and the 80A continuous rating handles peak motor phase currents up to 100A with thermal margin. The fast switching speed of trench MOSFET technology reduces switching losses at 20-50 kHz PWM frequencies typical of FOC (field-oriented control) drives. The low RDS(on) of the SM4036NHKP minimizes conduction losses during the high-current portion of each PWM cycle, improving overall motor efficiency and battery runtime in cordless applications.
Recommended
Battery Protection and Hot-Swap Circuits
The SM4036NHKP functions as the high-side disconnect FET in 4S-7S lithium battery packs for e-bikes, power banks, and UPS systems. Its 40V VDS rating covers the fully-charged voltage of 4S-7S Li-ion packs (16.8V - 29.4V) with substantial transient headroom for inductive loads. The 80A continuous rating supports peak discharge currents of e-bike motors during hill climbs. As a hot-swap FET in 24V telecom distribution, the SM4036NHKP handles inrush currents during board insertion while the PDFN-8 package keeps the overall solution size compact for blade-server applications.
Recommended
LED Lighting Drivers
In high-brightness LED drivers for automotive headlights, architectural lighting, and stage equipment, the SM4036NHKP operates as the main switching FET in buck and buck-boost topologies. The 40V VDS rating supports 12-24V LED strings with headroom for inductive transients, while the 80A current capability drives multi-ampere LED arrays. The low RDS(on) of the SM4036NHKP minimizes thermal dissipation in constant-current LED driver applications, allowing smaller heatsinks and more compact driver enclosures. The PDFN-8 package is ideal for space-constrained LED bulb form factors.
Recommended
Power OR-ing and Redundancy Switches
In server and telecom power systems, the SM4036NHKP serves as the OR-ing MOSFET that combines redundant 12V or 24V supply rails with reverse-current blocking. Its low RDS(on) minimizes voltage drop in the power path (typically <50 mV at 20A), which preserves efficiency in high-current distribution. The fast turn-off time of the SM4036NHKP responds to input supply failures in microseconds, preventing reverse current from the output capacitors back into a failed supply. The 40V VDS rating comfortably exceeds 24V telecom bus voltages with margin for transient events.
Recommended
Solar Microinverters and MPPT Stages
The SM4036NHKP functions as the main switching FET in the MPPT (Maximum Power Point Tracking) stage of small solar microinverters and charge controllers. The 40V breakdown is well-matched to single 12V/24V battery charging systems fed from photovoltaic panels. The 80A continuous rating supports solar array currents up to 1500W at 24V nominal, and the low on-resistance of the SM4036NHKP maximizes MPPT efficiency by reducing conduction losses. The PDFN-8 package's bottom-exposed drain tab simplifies thermal management when mounted to the inverter's metal chassis or to a substantial copper pour on the PCB.
Recommended
Recommended Products Summary
Engineering reference data for SM4036NHKP — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | SM4036NHKPC | AON7403 | DMN4030LSS | IRFH7084 | BSC0901NS | NVMTS0D4N04CL |
|---|---|---|---|---|---|---|---|
| Brand | Sinopower Semiconductor | Sinopower Semiconductor | Alpha & Omega Semiconductor | Diodes Incorporated | Infineon | Infineon | onsemi |
| Package | PDFN-8 (DFN5x6) | PDFN-8 (DFN5x6) - same | PDFN-8 (DFN5x6) - same | PDFN-8 (DFN5x6) - same | PDFN-8 (DFN5x6) - same | PDFN-8 (DFN5x6) - same | PDFN-8 (DFN5x6) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 30 V | 40 V |
| Continuous Drain Current (ID) | 80 A | 80 A | 50 A | 30 A | 50 A | 100 A | 60 A |
| AEC-Q100 Qualified | No | No | Yes | ||||
| Approx. Unit Price (1 pc, as of 2026-10-10) | USD 0.42 | USD 0.55 | USD 0.48 | USD 0.85 | USD 1.20 | USD 0.70 | |
| Trench Cell Technology | Yes | Yes | Yes | Yes (OptiMOS) | Yes (OptiMOS) | Yes |
Key Differentiators
- Best price/performance ratio in 40V PDFN-8 class (vs AON7403)
- Higher continuous current rating than most 40V PDFN-8 alternatives (vs DMN4030LSS)
- True 40V rating for 24V industrial bus with margin (vs BSC0901NS)
Design Notes
Estimated: at VDS=24V and ID=30A in continuous operation, the SM4036NHKP dissipates approximately P = I^2 x RDS(on) = 30^2 x 0.005 (typical) = 4.5W. With a thermal resistance (RthJA) of approximately 50 C/W on a 1 square inch copper pour (4-layer 1oz PCB), the junction temperature rise is around 225C above ambient - exceeding the maximum rating. A copper pour of at least 2 square inches with thermal vias to inner planes is required to keep Tj below 125C. Forced airflow is recommended for sustained >3W dissipation.
The PDFN-8 package requires careful PCB layout to achieve rated performance. Place the SM4036NHKP source pins directly on a continuous ground copper pour, and stitch the bottom drain tab to a thermal copper pour through an array of 6-10 thermal vias. Keep the gate trace as short as possible (under 10mm) and route it away from the drain switching node to minimize gate-to-drain coupling. Use a 10 ohm gate resistor to dampen ringing and prevent false turn-on from Miller capacitance spikes.
Do not operate the SM4036NHKP above its 40V VDS rating, even briefly - avalanche events can degrade the device. Ensure gate drive reaches at least 10V to fully enhance the channel and achieve rated RDS(on); operation at VGS=4.5V (logic-level) results in 2-3x higher on-resistance. Add a 100k ohm gate-to-source pull-down resistor to keep the device off during power-up and prevent floating-gate turn-on. Finally, never exceed the safe operating area (SOA) curve shown in the datasheet for pulsed loads such as inrush currents.
Compliance Information
RoHS and lead-free compliance per Sinopower product page. AEC-Q100 not qualified as of 2026-10-10 - choose onsemi NVMTS0D4N04CL for automotive. Halogen-free status and conflict minerals declaration should be requested from Sinopower directly.
