SSM3K35CT vs SSM3K35CT-L3F Comparison

Detailed side-by-side comparison of SSM3K35CT by Toshiba and SSM3K35CT-L3F by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter SSM3K35CT SSM3K35CT-L3F
Brand Toshiba Toshiba
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.15 $0.09
Polarity N-Channel N-Channel
MOSFET Mode Enhancement —
Drain-Source Breakdown Voltage (V(BR)DSS) 20 V —
Continuous Drain Current (ID) 0.18 A —
Drain-Source On-Resistance (RDS(on)) 3.0 Ω at VGS = 4 V —
Gate Threshold Voltage (Vth) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max gate-source voltage] —
Power Dissipation (PD) 100 mW (Ta) —
Operating Temperature Range [DATA_NEEDED: operating temperature range] —
Package SOT-883 (CST3), 3-pin leadless SOT-883 (CST3), 3 pins
Package Outline Code CST3 (Toshiba internal), 2-1J1B —
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL moisture sensitivity level] —
Application Category High-Speed Switching / Analog Switches —
RoHS Status Compliant Compliant
Lead-Free Yes Yes (L3F suffix)
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (V(DSS)) — 20 V
Gate-Source Voltage (V(GSS)) — ±10 V (per datasheet, [DATA_NEEDED: exact value])
Continuous Drain Current (I(D)) — 0.18 A (180 mA)
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS = 2.5 V]
Power Dissipation (P_D) — 500 mW (Ta) / [DATA_NEEDED: Ta condition]
Package Size — 1.0 mm x 0.6 mm, max height 0.5 mm
Operating Temperature — [DATA_NEEDED: junction/storage temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Tape and Reel — 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix)
Manufacturer — Toshiba Electronic Devices & Storage Corporation

Datasheets & Resources

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