SSM3K35CT vs SSM3K35CT-L3F 비교

다음의 상세 나란히 비교: SSM3K35CT 제조: Toshiba 및 SSM3K35CT-L3F 제조: Toshiba. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 SSM3K35CT SSM3K35CT-L3F
브랜드 Toshiba Toshiba
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.15 $0.09
Polarity N-Channel N-Channel
MOSFET Mode Enhancement —
Drain-Source Breakdown Voltage (V(BR)DSS) 20 V —
Continuous Drain Current (ID) 0.18 A —
Drain-Source On-Resistance (RDS(on)) 3.0 Ω at VGS = 4 V —
Gate Threshold Voltage (Vth) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max gate-source voltage] —
Power Dissipation (PD) 100 mW (Ta) —
동작 온도 범위 [DATA_NEEDED: operating temperature range] —
패키지 SOT-883 (CST3), 3-pin leadless SOT-883 (CST3), 3 pins
Package Outline Code CST3 (Toshiba internal), 2-1J1B —
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL moisture sensitivity level] —
Application Category High-Speed Switching / Analog Switches —
RoHS 상태 Compliant Compliant
Lead-Free Yes Yes (L3F suffix)
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (V(DSS)) — 20 V
Gate-Source Voltage (V(GSS)) — ±10 V (per datasheet, [DATA_NEEDED: exact value])
Continuous Drain Current (I(D)) — 0.18 A (180 mA)
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS = 2.5 V]
Power Dissipation (P_D) — 500 mW (Ta) / [DATA_NEEDED: Ta condition]
Package Size — 1.0 mm x 0.6 mm, max height 0.5 mm
동작 온도 — [DATA_NEEDED: junction/storage temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Tape and Reel — 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix)
Manufacturer — Toshiba Electronic Devices & Storage Corporation

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