SSM3K35CT vs SSM3K35CT-L3F Comparaison
Comparaison détaillée côte à côte de SSM3K35CT par Toshiba et SSM3K35CT-L3F par Toshiba. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | SSM3K35CT | SSM3K35CT-L3F |
|---|---|---|
| Marque | Toshiba | Toshiba |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,15 | $0,09 |
| Polarity | N-Channel | N-Channel |
| MOSFET Mode | Enhancement | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 20 V | — |
| Continuous Drain Current (ID) | 0.18 A | — |
| Drain-Source On-Resistance (RDS(on)) | 3.0 Ω at VGS = 4 V | — |
| Gate Threshold Voltage (Vth) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max gate-source voltage] | — |
| Power Dissipation (PD) | 100 mW (Ta) | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Boîtier | SOT-883 (CST3), 3-pin leadless | SOT-883 (CST3), 3 pins |
| Package Outline Code | CST3 (Toshiba internal), 2-1J1B | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Application Category | High-Speed Switching / Analog Switches | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes (L3F suffix) |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (V(DSS)) | — | 20 V |
| Gate-Source Voltage (V(GSS)) | — | ±10 V (per datasheet, [DATA_NEEDED: exact value]) |
| Continuous Drain Current (I(D)) | — | 0.18 A (180 mA) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS = 2.5 V] |
| Power Dissipation (P_D) | — | 500 mW (Ta) / [DATA_NEEDED: Ta condition] |
| Package Size | — | 1.0 mm x 0.6 mm, max height 0.5 mm |
| Température de fonctionnement | — | [DATA_NEEDED: junction/storage temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Tape and Reel | — | 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) |
| Manufacturer | — | Toshiba Electronic Devices & Storage Corporation |