SSM3K35CT vs SSM3K35CT-L3F Comparación
Comparación detallada lado a lado de SSM3K35CT por Toshiba y SSM3K35CT-L3F por Toshiba. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | SSM3K35CT | SSM3K35CT-L3F |
|---|---|---|
| Marca | Toshiba | Toshiba |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,15 | $0,09 |
| Polarity | N-Channel | N-Channel |
| MOSFET Mode | Enhancement | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 20 V | — |
| Continuous Drain Current (ID) | 0.18 A | — |
| Drain-Source On-Resistance (RDS(on)) | 3.0 Ω at VGS = 4 V | — |
| Gate Threshold Voltage (Vth) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max gate-source voltage] | — |
| Power Dissipation (PD) | 100 mW (Ta) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Encapsulado | SOT-883 (CST3), 3-pin leadless | SOT-883 (CST3), 3 pins |
| Package Outline Code | CST3 (Toshiba internal), 2-1J1B | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Application Category | High-Speed Switching / Analog Switches | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes (L3F suffix) |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (V(DSS)) | — | 20 V |
| Gate-Source Voltage (V(GSS)) | — | ±10 V (per datasheet, [DATA_NEEDED: exact value]) |
| Continuous Drain Current (I(D)) | — | 0.18 A (180 mA) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS = 2.5 V] |
| Power Dissipation (P_D) | — | 500 mW (Ta) / [DATA_NEEDED: Ta condition] |
| Package Size | — | 1.0 mm x 0.6 mm, max height 0.5 mm |
| Temperatura de funcionamiento | — | [DATA_NEEDED: junction/storage temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Tape and Reel | — | 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) |
| Manufacturer | — | Toshiba Electronic Devices & Storage Corporation |