STF13N95K3 vs IPN95R1K2P7ATMA1 Comparison

Detailed side-by-side comparison of STF13N95K3 by STMicroelectronics and IPN95R1K2P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter STF13N95K3 IPN95R1K2P7ATMA1
Brand STMicroelectronics Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $0.36
Polarity N-Channel —
Drain-Source Breakdown Voltage (BVdss) 950 V —
Continuous Drain Current (ID) at 25°C 13 A —
Continuous Drain Current (ID) at 100°C 8.2 A —
Pulsed Drain Current (IDM) 39 A —
On-Resistance (RDS(on)) at VGS=10V 0.55 ohm (typical) —
Gate-Source Threshold Voltage (VGS(th)) 3 V to 5 V —
Gate Charge (Qg) 45 nC —
Input Capacitance (Ciss) 1900 pF —
Output Capacitance (Coss) 120 pF —
Reverse Transfer Capacitance (Crss) 10 pF —
Avalanche Energy (EAS) 400 mJ —
Operating Temperature Range -55°C to +150°C -55C to +150C
Package TO-220FP SOT-223-3 (PG-SOT223)
Mounting Type Through Hole Surface Mount
RoHS Status Compliant Compliant
Halogen Free Yes —
FET Type — N-Channel
Technology — CoolMOS P7 (Super Junction)
Drain-to-Source Voltage (V_DSS) — 950 V
Continuous Drain Current (I_D) at T_C — 6 A
Maximum On-Resistance R_DS(on) at V_GS=10V — 1200 mOhm (1.2 Ohm)
Gate Drive Voltage (max R_DS(on)) — 10 V
Power Dissipation (T_C) — 7 W
Pin Count — 3 (2 + Tab)
Series — CoolMOS P7
Packaging — Tape & Reel
Part Status — Active

Datasheets & Resources

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