STF13N95K3 vs IPN95R1K2P7ATMA1 对比

详细并排对比 STF13N95K3 出自 STMicroelectronics 和 IPN95R1K2P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
STF13N95K3 STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics

STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics

STF13N95K3 ✓ 量产中
Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 ✓ 量产中

规格对比

参数 STF13N95K3 IPN95R1K2P7ATMA1
品牌 STMicroelectronics Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.85 $0.36
Polarity N-Channel —
Drain-Source Breakdown Voltage (BVdss) 950 V —
Continuous Drain Current (ID) at 25°C 13 A —
Continuous Drain Current (ID) at 100°C 8.2 A —
Pulsed Drain Current (IDM) 39 A —
On-Resistance (RDS(on)) at VGS=10V 0.55 ohm (typical) —
Gate-Source Threshold Voltage (VGS(th)) 3 V to 5 V —
Gate Charge (Qg) 45 nC —
Input Capacitance (Ciss) 1900 pF —
Output Capacitance (Coss) 120 pF —
Reverse Transfer Capacitance (Crss) 10 pF —
Avalanche Energy (EAS) 400 mJ —
工作温度范围 -55°C to +150°C -55C to +150C
封装 TO-220FP SOT-223-3 (PG-SOT223)
安装类型 Through Hole Surface Mount
RoHS 状态 Compliant Compliant
无卤 Yes —
FET Type — N-Channel
Technology — CoolMOS P7 (Super Junction)
Drain-to-Source Voltage (V_DSS) — 950 V
Continuous Drain Current (I_D) at T_C — 6 A
Maximum On-Resistance R_DS(on) at V_GS=10V — 1200 mOhm (1.2 Ohm)
Gate Drive Voltage (max R_DS(on)) — 10 V
Power Dissipation (T_C) — 7 W
引脚数量 — 3 (2 + Tab)
Series — CoolMOS P7
Packaging — Tape & Reel
Part Status — Active

数据手册与资源

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