STF13N95K3 vs IPN95R1K2P7ATMA1 对比
详细并排对比 STF13N95K3 出自 STMicroelectronics 和 IPN95R1K2P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。
STMicroelectronics
STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics
STF13N95K3 ✓ 量产中规格对比
| 参数 | STF13N95K3 | IPN95R1K2P7ATMA1 |
|---|---|---|
| 品牌 | STMicroelectronics | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价(USD) | $1.85 | $0.36 |
| Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (BVdss) | 950 V | — |
| Continuous Drain Current (ID) at 25°C | 13 A | — |
| Continuous Drain Current (ID) at 100°C | 8.2 A | — |
| Pulsed Drain Current (IDM) | 39 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.55 ohm (typical) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V to 5 V | — |
| Gate Charge (Qg) | 45 nC | — |
| Input Capacitance (Ciss) | 1900 pF | — |
| Output Capacitance (Coss) | 120 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Avalanche Energy (EAS) | 400 mJ | — |
| 工作温度范围 | -55°C to +150°C | -55C to +150C |
| 封装 | TO-220FP | SOT-223-3 (PG-SOT223) |
| 安装类型 | Through Hole | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| FET Type | — | N-Channel |
| Technology | — | CoolMOS P7 (Super Junction) |
| Drain-to-Source Voltage (V_DSS) | — | 950 V |
| Continuous Drain Current (I_D) at T_C | — | 6 A |
| Maximum On-Resistance R_DS(on) at V_GS=10V | — | 1200 mOhm (1.2 Ohm) |
| Gate Drive Voltage (max R_DS(on)) | — | 10 V |
| Power Dissipation (T_C) | — | 7 W |
| 引脚数量 | — | 3 (2 + Tab) |
| Series | — | CoolMOS P7 |
| Packaging | — | Tape & Reel |
| Part Status | — | Active |