STF13N95K3 vs IPN95R1K2P7ATMA1 Comparación
Comparación detallada lado a lado de STF13N95K3 por STMicroelectronics y IPN95R1K2P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics
STF13N95K3 ✓ Activo
Comparación de especificaciones
| Parámetro | STF13N95K3 | IPN95R1K2P7ATMA1 |
|---|---|---|
| Marca | STMicroelectronics | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,85 | $0,36 |
| Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (BVdss) | 950 V | — |
| Continuous Drain Current (ID) at 25°C | 13 A | — |
| Continuous Drain Current (ID) at 100°C | 8.2 A | — |
| Pulsed Drain Current (IDM) | 39 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.55 ohm (typical) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V to 5 V | — |
| Gate Charge (Qg) | 45 nC | — |
| Input Capacitance (Ciss) | 1900 pF | — |
| Output Capacitance (Coss) | 120 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Avalanche Energy (EAS) | 400 mJ | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C | -55C to +150C |
| Encapsulado | TO-220FP | SOT-223-3 (PG-SOT223) |
| Tipo de montaje | Through Hole | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| FET Type | — | N-Channel |
| Technology | — | CoolMOS P7 (Super Junction) |
| Drain-to-Source Voltage (V_DSS) | — | 950 V |
| Continuous Drain Current (I_D) at T_C | — | 6 A |
| Maximum On-Resistance R_DS(on) at V_GS=10V | — | 1200 mOhm (1.2 Ohm) |
| Gate Drive Voltage (max R_DS(on)) | — | 10 V |
| Power Dissipation (T_C) | — | 7 W |
| Recuento de pines | — | 3 (2 + Tab) |
| Series | — | CoolMOS P7 |
| Packaging | — | Tape & Reel |
| Part Status | — | Active |