STF13N95K3 vs IPN95R1K2P7ATMA1 Vergleich
Detaillierter Direktvergleich von STF13N95K3 von STMicroelectronics und IPN95R1K2P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics
STF13N95K3 ✓ Aktiv
Spezifikationsvergleich
| Parameter | STF13N95K3 | IPN95R1K2P7ATMA1 |
|---|---|---|
| Marke | STMicroelectronics | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,85 | $0,36 |
| Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (BVdss) | 950 V | — |
| Continuous Drain Current (ID) at 25°C | 13 A | — |
| Continuous Drain Current (ID) at 100°C | 8.2 A | — |
| Pulsed Drain Current (IDM) | 39 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.55 ohm (typical) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V to 5 V | — |
| Gate Charge (Qg) | 45 nC | — |
| Input Capacitance (Ciss) | 1900 pF | — |
| Output Capacitance (Coss) | 120 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Avalanche Energy (EAS) | 400 mJ | — |
| Betriebstemperaturbereich | -55°C to +150°C | -55C to +150C |
| Gehäuse | TO-220FP | SOT-223-3 (PG-SOT223) |
| Montageart | Through Hole | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| FET Type | — | N-Channel |
| Technology | — | CoolMOS P7 (Super Junction) |
| Drain-to-Source Voltage (V_DSS) | — | 950 V |
| Continuous Drain Current (I_D) at T_C | — | 6 A |
| Maximum On-Resistance R_DS(on) at V_GS=10V | — | 1200 mOhm (1.2 Ohm) |
| Gate Drive Voltage (max R_DS(on)) | — | 10 V |
| Power Dissipation (T_C) | — | 7 W |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Series | — | CoolMOS P7 |
| Packaging | — | Tape & Reel |
| Part Status | — | Active |