STS7DNH3LL vs BSC0901NSATMA1 Comparison
Detailed side-by-side comparison of STS7DNH3LL by STMicroelectronics and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
STMicroelectronics
STS7DNH3LL - Dual N-Channel 30V MOSFET, 0.018Ω, 7A | STMicroelectronics
STS7DNH3LL ✓ Active
Specification Comparison
| Parameter | STS7DNH3LL | BSC0901NSATMA1 |
|---|---|---|
| Brand | STMicroelectronics | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.78 |
| Manufacturer | STMicroelectronics | Infineon Technologies |
| Product Type | Dual N-Channel Power MOSFET | — |
| Technology | STripFET III (trench gate) | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 7 A per channel | — |
| On-Resistance RDS(on) typ. | 0.018 Ω at VGS = 10 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Package | SO-8 | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Power Dissipation (per channel) | [DATA_NEEDED: PD per channel] | — |
| Channel Count | 2 (Dual) | — |
| Channel Polarity | N-Channel | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Operating Temperature Range | — | -55C to +150C |
| Moisture Sensitivity Level (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |