STS7DNH3LL vs BSC0901NSATMA1 Vergleich
Detaillierter Direktvergleich von STS7DNH3LL von STMicroelectronics und BSC0901NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
STS7DNH3LL - Dual N-Channel 30V MOSFET, 0.018Ω, 7A | STMicroelectronics
STS7DNH3LL ✓ Aktiv
Spezifikationsvergleich
| Parameter | STS7DNH3LL | BSC0901NSATMA1 |
|---|---|---|
| Marke | STMicroelectronics | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $0,78 |
| Manufacturer | STMicroelectronics | Infineon Technologies |
| Product Type | Dual N-Channel Power MOSFET | — |
| Technology | STripFET III (trench gate) | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 7 A per channel | — |
| On-Resistance RDS(on) typ. | 0.018 Ω at VGS = 10 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Gehäuse | SO-8 | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Power Dissipation (per channel) | [DATA_NEEDED: PD per channel] | — |
| Channel Count | 2 (Dual) | — |
| Channel Polarity | N-Channel | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Betriebstemperaturbereich | — | -55C to +150C |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |