STS7DNH3LL vs BSC0901NSATMA1 对比
详细并排对比 STS7DNH3LL 出自 STMicroelectronics 和 BSC0901NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
STMicroelectronics
STS7DNH3LL - Dual N-Channel 30V MOSFET, 0.018Ω, 7A | STMicroelectronics
STS7DNH3LL ✓ 量产中
规格对比
| 参数 | STS7DNH3LL | BSC0901NSATMA1 |
|---|---|---|
| 品牌 | STMicroelectronics | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.41 | $0.78 |
| Manufacturer | STMicroelectronics | Infineon Technologies |
| Product Type | Dual N-Channel Power MOSFET | — |
| Technology | STripFET III (trench gate) | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 7 A per channel | — |
| On-Resistance RDS(on) typ. | 0.018 Ω at VGS = 10 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| 封装 | SO-8 | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| 安装类型 | Surface Mount | Surface Mount |
| 工作结温 | -55 °C to +175 °C | — |
| Power Dissipation (per channel) | [DATA_NEEDED: PD per channel] | — |
| Channel Count | 2 (Dual) | — |
| Channel Polarity | N-Channel | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 工作温度范围 | — | -55C to +150C |
| 湿敏等级（MSL） | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |