STW11NK90Z vs STW12NK95Z Comparison

Detailed side-by-side comparison of STW11NK90Z by STMicroelectronics and STW12NK95Z by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

STMicroelectronics
STW11NK90Z STW11NK90Z - 900V N-Channel Power MOSFET | STMicroelectronics

STW11NK90Z - 900V N-Channel Power MOSFET | STMicroelectronics

STW11NK90Z ✓ Active

Specification Comparison

Parameter STW11NK90Z STW12NK95Z
Brand STMicroelectronics STMicroelectronics
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.70 $3.19
Drain-Source Voltage (VDS) 900 V —
Continuous Drain Current (ID) at 25°C 9.5 A —
Continuous Drain Current (ID) at 100°C 6 A —
Pulsed Drain Current (IDM) 38 A —
Gate-Source Voltage (VGS) ±30 V —
On-Resistance (RDS(on)) 0.85 ohm —
Gate Threshold Voltage (VGS(th)) 3 V to 5 V —
Gate Charge (Qg) 45 nC —
Input Capacitance (Ciss) 1900 pF —
Output Capacitance (Coss) 150 pF —
Reverse Transfer Capacitance (Crss) 20 pF —
Maximum Power Dissipation (PD) 250 W —
Operating Junction Temperature (Tj) -55°C to +150°C —
Package TO-247 TO-247-3
Mounting Type Through Hole Through Hole
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Polarity — N-Channel
Drain-Source Breakdown Voltage (Vdss) — 950 V
Continuous Drain Current (Id) at Tc — 10 A
On-Resistance (Rds on) Max — 0.90 ohm
On-Resistance (Rds on) Typ — 0.69 ohm
Power Dissipation (Pd) at Tc — 230 W
Technology — SuperMESH (Zener-protected PowerMESH)
Gate Protection — Zener-protected gate oxide
Avalanche Rating — 100% avalanche tested
dv/dt Capability — Extremely high [DATA_NEEDED: dv/dt value]
Operating Temperature — -55C to +150C (junction)
Gate Charge — Minimized [DATA_NEEDED: Qg typical value]

Datasheets & Resources

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