STW11NK90Z vs STW12NK95Z 비교
다음의 상세 나란히 비교: STW11NK90Z 제조: STMicroelectronics 및 STW12NK95Z 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
STMicroelectronics
STW12NK95Z - 950V 10A Zener SuperMESH MOSFET | STMicroelectronics
STW12NK95Z ✓ 활성사양 비교
| 파라미터 | STW11NK90Z | STW12NK95Z |
|---|---|---|
| 브랜드 | STMicroelectronics | STMicroelectronics |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.70 | $3.19 |
| Drain-Source Voltage (VDS) | 900 V | — |
| Continuous Drain Current (ID) at 25°C | 9.5 A | — |
| Continuous Drain Current (ID) at 100°C | 6 A | — |
| Pulsed Drain Current (IDM) | 38 A | — |
| Gate-Source Voltage (VGS) | ±30 V | — |
| On-Resistance (RDS(on)) | 0.85 ohm | — |
| Gate Threshold Voltage (VGS(th)) | 3 V to 5 V | — |
| Gate Charge (Qg) | 45 nC | — |
| Input Capacitance (Ciss) | 1900 pF | — |
| Output Capacitance (Coss) | 150 pF | — |
| Reverse Transfer Capacitance (Crss) | 20 pF | — |
| Maximum Power Dissipation (PD) | 250 W | — |
| Operating Junction Temperature (Tj) | -55°C to +150°C | — |
| 패키지 | TO-247 | TO-247-3 |
| 실장 유형 | Through Hole | Through Hole |
| RoHS 상태 | Compliant | [DATA_NEEDED: RoHS status] |
| Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (Vdss) | — | 950 V |
| Continuous Drain Current (Id) at Tc | — | 10 A |
| On-Resistance (Rds on) Max | — | 0.90 ohm |
| On-Resistance (Rds on) Typ | — | 0.69 ohm |
| Power Dissipation (Pd) at Tc | — | 230 W |
| Technology | — | SuperMESH (Zener-protected PowerMESH) |
| Gate Protection | — | Zener-protected gate oxide |
| Avalanche Rating | — | 100% avalanche tested |
| dv/dt Capability | — | Extremely high [DATA_NEEDED: dv/dt value] |
| 동작 온도 | — | -55C to +150C (junction) |
| Gate Charge | — | Minimized [DATA_NEEDED: Qg typical value] |