STW11NK90Z vs STW12NK95Z 对比
详细并排对比 STW11NK90Z 出自 STMicroelectronics 和 STW12NK95Z 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
STMicroelectronics
STW12NK95Z - 950V 10A Zener SuperMESH MOSFET | STMicroelectronics
STW12NK95Z ✓ 量产中规格对比
| 参数 | STW11NK90Z | STW12NK95Z |
|---|---|---|
| 品牌 | STMicroelectronics | STMicroelectronics |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.70 | $3.19 |
| Drain-Source Voltage (VDS) | 900 V | — |
| Continuous Drain Current (ID) at 25°C | 9.5 A | — |
| Continuous Drain Current (ID) at 100°C | 6 A | — |
| Pulsed Drain Current (IDM) | 38 A | — |
| Gate-Source Voltage (VGS) | ±30 V | — |
| On-Resistance (RDS(on)) | 0.85 ohm | — |
| Gate Threshold Voltage (VGS(th)) | 3 V to 5 V | — |
| Gate Charge (Qg) | 45 nC | — |
| Input Capacitance (Ciss) | 1900 pF | — |
| Output Capacitance (Coss) | 150 pF | — |
| Reverse Transfer Capacitance (Crss) | 20 pF | — |
| Maximum Power Dissipation (PD) | 250 W | — |
| Operating Junction Temperature (Tj) | -55°C to +150°C | — |
| 封装 | TO-247 | TO-247-3 |
| 安装类型 | Through Hole | Through Hole |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (Vdss) | — | 950 V |
| Continuous Drain Current (Id) at Tc | — | 10 A |
| On-Resistance (Rds on) Max | — | 0.90 ohm |
| On-Resistance (Rds on) Typ | — | 0.69 ohm |
| Power Dissipation (Pd) at Tc | — | 230 W |
| Technology | — | SuperMESH (Zener-protected PowerMESH) |
| Gate Protection | — | Zener-protected gate oxide |
| Avalanche Rating | — | 100% avalanche tested |
| dv/dt Capability | — | Extremely high [DATA_NEEDED: dv/dt value] |
| 工作温度 | — | -55C to +150C (junction) |
| Gate Charge | — | Minimized [DATA_NEEDED: Qg typical value] |