STW11NK90Z - 900V N-Channel Power MOSFET | STMicroelectronics
MPN: STW11NK90Z β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.05 | $40.50 |
| 100 | $3.6 | $360.00 |
| 500 | $3.15 | $1,575.00 |
| 1,000 | $2.7 | $2,700.00 |
Drop-in alternatives for STW11NK90Z β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STW11NK90Z-1
β Drop-Inπ Reference alternative (not in catalog)
STW11NK90Z-2
β Drop-Inπ Reference alternative (not in catalog)
FCP11N90
β Drop-Inπ Reference alternative (not in catalog)
IXFH11N90P
β Drop-Inπ Reference alternative (not in catalog)
SPW11N90C3
β Drop-Inπ Reference alternative (not in catalog)
STW11NK90Z Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS) | 900 V |
| Continuous Drain Current (ID) at 25Β°C | 9.5 A |
| Continuous Drain Current (ID) at 100Β°C | 6 A |
| Pulsed Drain Current (IDM) | 38 A |
| Gate-Source Voltage (VGS) | Β±30 V |
| On-Resistance (RDS(on)) | 0.85 ohm |
| Gate Threshold Voltage (VGS(th)) | 3 V to 5 V |
| Gate Charge (Qg) | 45 nC |
| Input Capacitance (Ciss) | 1900 pF |
| Output Capacitance (Coss) | 150 pF |
| Reverse Transfer Capacitance (Crss) | 20 pF |
| Maximum Power Dissipation (PD) | 250 W |
| Operating Junction Temperature (Tj) | -55Β°C to +150Β°C |
| Package | TO-247 |
| Mounting Type | Through Hole |
| RoHS Status | Compliant |
STW11NK90Z Pin Configuration
| Pin 1 | Gate β Gate terminal for controlling the MOSFET |
| Pin 2 | Drain β Drain terminal, connected to the load |
| Pin 3 | Source β Source terminal, connected to ground |
Safe Operating Area
Typical Applications
STW11NK90Z is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Circuits, High-Voltage DC-DC Converters, Industrial Motor Drives, Renewable Energy Inverters, Lighting (HID and LED Drivers).
Switch-Mode Power Supplies (SMPS)
The STW11NK90Z is ideal for SMPS due to its high voltage rating (900V) and low on-resistance (0.85 ohm). In a typical flyback converter, the MOSFET switches at high frequency, and the low RDS(on) reduces conduction losses, improving efficiency. The fast switching speed minimizes switching losses, allowing higher operating frequencies and smaller magnetic components. The TO-247 package ensures adequate heat dissipation, which is critical for continuous operation at high power levels.
Recommended
Power Factor Correction (PFC) Circuits
In PFC circuits, the STW11NK90Z is used as the boost switch to shape the input current waveform. Its high voltage rating (900V) handles the boosted voltage, while the low on-resistance minimizes conduction losses. The device's fast switching capability enables high-frequency operation, reducing the size of the boost inductor. The TO-247 package provides low thermal resistance, allowing the MOSFET to dissipate heat effectively during continuous operation.
Recommended
High-Voltage DC-DC Converters
The STW11NK90Z is suitable for high-voltage DC-DC converters, such as those used in solar inverters and electric vehicle chargers. Its 900V drain-source voltage rating provides ample margin for high input voltages, and the low on-resistance ensures high efficiency. The fast switching speed reduces switching losses, enabling compact designs. The TO-247 package allows for efficient heat sinking, which is essential for high-power applications.
Recommended
Industrial Motor Drives
In industrial motor drives, the STW11NK90Z is used in the inverter stage to switch DC to AC. Its high voltage rating (900V) is suitable for 3-phase AC motor drives operating from 400VAC or higher. The low on-resistance reduces conduction losses, improving overall drive efficiency. The device's ruggedness and thermal performance make it reliable for demanding industrial environments.
Recommended
Renewable Energy Inverters
The STW11NK90Z is used in solar and wind inverters for DC-AC conversion. Its high voltage rating (900V) accommodates the high DC bus voltages in photovoltaic systems. The low on-resistance minimizes losses, maximizing energy harvest. The fast switching speed enables high-frequency PWM, improving output waveform quality. The TO-247 package ensures reliable thermal management in outdoor installations.
Recommended
Lighting (HID and LED Drivers)
The STW11NK90Z can be used in high-intensity discharge (HID) lamp ballasts and high-power LED drivers. Its high voltage rating (900V) is suitable for AC mains applications, and the low on-resistance improves efficiency. The fast switching speed allows for compact magnetic components. The TO-247 package provides good thermal performance, ensuring long-term reliability.
Recommended
Recommended Products Summary
Engineering reference data for STW11NK90Z β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STW11NK90Z-1 | FCP11N90 | IXFH11N90P | SPW11N90C3 |
|---|---|---|---|---|---|
| Package | TO-247 | TO-247-3 | TO-247 | TO-247 | TO-247 |
| Brand | STMicroelectronics | STMicroelectronics | onsemi | IXYS | Infineon |
| Drain-Source Voltage (VDS) | 900 V | 900 V | 900 V | 900 V | 900 V |
| Continuous Drain Current (ID) at 25Β°C | 9.5 A | 9.5 A | 11 A | 11 A | 11 A |
| On-Resistance (RDS(on)) | 0.85 ohm | 0.85 ohm | 0.75 ohm | 0.85 ohm | 0.75 ohm |
| Gate Charge (Qg) | 45 nC | 45 nC | 40 nC | 50 nC | 40 nC |
| Maximum Power Dissipation (PD) | 250 W | 250 W | 250 W | 250 W | 250 W |
| Operating Junction Temperature (Tj) | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C |
Key Differentiators
- High voltage rating of 900V (vs FCP11N90)
- Low on-resistance of 0.85 ohm (vs IXFH11N90P)
- Proven PowerMESH technology (vs SPW11N90C3)
Design Notes
The STW11NK90Z has a maximum power dissipation of 250W. At high power levels, proper heat sinking is essential. The TO-247 package has a junction-to-case thermal resistance of 0.5Β°C/W. Use a heatsink with a thermal resistance of less than 0.5Β°C/W to keep the junction temperature below 150Β°C. For example, at 100W dissipation, the case temperature rise is 50Β°C, so the heatsink must maintain the case temperature below 100Β°C.
For the TO-247 package, ensure the mounting hole is properly sized and the leads are soldered with adequate thermal relief. Use a large copper area on the PCB connected to the drain tab for heat spreading. Place the gate drive components close to the gate pin to minimize parasitic inductance. Use a gate resistor (e.g., 10 ohm) to dampen oscillations.
Do not exceed the maximum gate-source voltage of Β±30V. Ensure the gate drive voltage is within the recommended range (typically 10V to 15V) to fully enhance the channel. Avoid operating the device in the linear region for extended periods, as this can cause excessive power dissipation and thermal runaway. Use a proper snubber circuit to limit voltage spikes during switching.
Compliance Information
RoHS compliant per STMicroelectronics product page. Not AEC-Q101 qualified for automotive.