STW45NM50 vs IPP600N25N3GXKSA1 Comparison

Detailed side-by-side comparison of STW45NM50 by STMicroelectronics and IPP600N25N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter STW45NM50 IPP600N25N3GXKSA1
Brand STMicroelectronics Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $9.55 $1.62
Polarity N-Channel —
Drain-Source Voltage (VDS) 500 V —
Continuous Drain Current (ID) at 25°C 45 A —
Continuous Drain Current (ID) at 100°C 30 A —
Pulsed Drain Current (IDM) 180 A —
Gate-Source Voltage (VGS) ±30 V —
On-Resistance (RDS(on)) 0.09 ohm —
Gate Charge (Qg) 120 nC —
Avalanche Energy (EAS) 1.2 J —
Power Dissipation (PD) 450 W —
Operating Temperature Range -55°C to +150°C -55C to +175C (junction)
Package TO-247 —
Mounting Type Through Hole Through Hole
RoHS Status Compliant —
Halogen Free Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Part Status — Active
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc=25C — 25 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 60 mOhm at VGS=10V
Power Dissipation (PD) at Tc=25C — 136 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Package / Case — TO-220-3 (PG-TO220-3-1)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]
Reverse Recovery Time (trr) — [DATA_NEEDED: trr typical value]
Lead Free Status — Lead Free / RoHS Compliant
Pin Count — 3 (Gate, Drain, Source)

Datasheets & Resources

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