TJ60S06M3L vs TJ60S06M3LT6L1.NQ Comparison
Detailed side-by-side comparison of TJ60S06M3L by Toshiba and TJ60S06M3LT6L1.NQ by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ ActiveSpecification Comparison
| Parameter | TJ60S06M3L | TJ60S06M3LT6L1.NQ |
|---|---|---|
| Brand | Toshiba | Toshiba |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.52 |
| Polarity | P-Channel | P-channel |
| Technology | U-MOSVI (Trench MOSFET) | Toshiba U-MOS (silicon) |
| Drain-Source Voltage (VDS) | -60 V | -60 V |
| Continuous Drain Current (ID) | -60 A (Tc) | — |
| Power Dissipation (PD) | 100 W (Tc) | — |
| On-State Resistance (RDS(on)) | 11.2 mΩ (typ.) at VGS = -10 V | — |
| Gate-Source Threshold Voltage (Vth) | -3.0 V (typ.) at VDS = -1 mA | — |
| Drain Leakage Current (IDSS) | -10 µA (max) at VDS = -40 V | — |
| Input Capacitance (Ciss) | 7760 pF (typ.) | 7760 pF |
| Package | DPAK+ (TO-252-3 surface-mount) | DPAK+ (TO-252) |
| Operating Temperature Range | [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet] | — |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | RoHS compliant | — |
| Automotive Grade | AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) | — |
| Manufacturer | Toshiba Electronic Devices & Storage | — |
| Cell Technology | Trench (enhancement mode) | — |
| Gate-Source Voltage (VGS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) at TC=25C | — | -60 A |
| Power Dissipation (PD) at TC=25C | — | 100 W |
| RDS(on) Max at VGS=-10V | — | 0.0112 ohm |
| FET Type | — | MOSFET P-Channel, Metal Oxide |
| Operating Temperature | — | -55C to +150C (Tj) |
| MSL Level | — | 1 (unlimited) |
| RoHS Status | — | Compliant |
| Automotive Qualified | — | Yes (per Toshiba product positioning) |