TJ60S06M3L vs TJ60S06M3LT6L1.NQ Vergleich
Detaillierter Direktvergleich von TJ60S06M3L von Toshiba und TJ60S06M3LT6L1.NQ von Toshiba. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ AktivSpezifikationsvergleich
| Parameter | TJ60S06M3L | TJ60S06M3LT6L1.NQ |
|---|---|---|
| Marke | Toshiba | Toshiba |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,54 | $0,52 |
| Polarity | P-Channel | P-channel |
| Technology | U-MOSVI (Trench MOSFET) | Toshiba U-MOS (silicon) |
| Drain-Source Voltage (VDS) | -60 V | -60 V |
| Continuous Drain Current (ID) | -60 A (Tc) | — |
| Power Dissipation (PD) | 100 W (Tc) | — |
| On-State Resistance (RDS(on)) | 11.2 mΩ (typ.) at VGS = -10 V | — |
| Gate-Source Threshold Voltage (Vth) | -3.0 V (typ.) at VDS = -1 mA | — |
| Drain Leakage Current (IDSS) | -10 µA (max) at VDS = -40 V | — |
| Input Capacitance (Ciss) | 7760 pF (typ.) | 7760 pF |
| Gehäuse | DPAK+ (TO-252-3 surface-mount) | DPAK+ (TO-252) |
| Betriebstemperaturbereich | [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet] | — |
| Montageart | Surface Mount | Surface Mount |
| Lead-Free / RoHS | RoHS compliant | — |
| Automotive Grade | AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) | — |
| Manufacturer | Toshiba Electronic Devices & Storage | — |
| Cell Technology | Trench (enhancement mode) | — |
| Gate-Source Voltage (VGS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) at TC=25C | — | -60 A |
| Power Dissipation (PD) at TC=25C | — | 100 W |
| RDS(on) Max at VGS=-10V | — | 0.0112 ohm |
| FET Type | — | MOSFET P-Channel, Metal Oxide |
| Betriebstemperatur | — | -55C to +150C (Tj) |
| MSL-Level | — | 1 (unlimited) |
| RoHS-Status | — | Compliant |
| Automotive Qualified | — | Yes (per Toshiba product positioning) |