TJ60S06M3LT6L1.NQ vs TJ60S06M3L(T6L1NQ Comparison
Detailed side-by-side comparison of TJ60S06M3LT6L1.NQ by Toshiba and TJ60S06M3L(T6L1NQ by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ ActiveSpecification Comparison
| Parameter | TJ60S06M3LT6L1.NQ | TJ60S06M3L(T6L1NQ |
|---|---|---|
| Brand | Toshiba | Toshiba |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.92 |
| Polarity | P-channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Gate-Source Voltage (VGS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) at TC=25C | -60 A | — |
| Power Dissipation (PD) at TC=25C | 100 W | — |
| RDS(on) Max at VGS=-10V | 0.0112 ohm | — |
| Input Capacitance (Ciss) | 7760 pF | 7760 pF typ |
| FET Type | MOSFET P-Channel, Metal Oxide | — |
| Mounting Type | Surface Mount | Surface Mount |
| Package | DPAK+ (TO-252) | DPAK+ (TO-252-3) |
| Operating Temperature | -55C to +150C (Tj) | — |
| Technology | Toshiba U-MOS (silicon) | Silicon U-MOS (trench) |
| MSL Level | 1 (unlimited) | — |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified | Yes (per Toshiba product positioning) | — |
| Transistor Type | — | P-Channel MOSFET |
| Drain-Source Voltage (VDSS) | — | -60 V |
| Gate-Source Voltage (VGSS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) | — | -60 A (Tc) |
| Power Dissipation (PD) | — | 100 W (Tc) |
| RDS(ON) Max @ VGS = -10 V | — | 14.5 mOhm |
| RDS(ON) Typ @ VGS = -10 V | — | 11.2 mOhm |
| Gate Threshold Voltage (Vth) | — | -3.0 V typ (VDS = -1 mA, enhancement mode) |
| Leakage Current (IDSS) Max | — | -10 uA (VDS = -40 V) |
| Operating Temperature Range | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 |