TJ60S06M3LT6L1.NQ vs TJ60S06M3L(T6L1NQ Vergleich
Detaillierter Direktvergleich von TJ60S06M3LT6L1.NQ von Toshiba und TJ60S06M3L(T6L1NQ von Toshiba. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ AktivSpezifikationsvergleich
| Parameter | TJ60S06M3LT6L1.NQ | TJ60S06M3L(T6L1NQ |
|---|---|---|
| Marke | Toshiba | Toshiba |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,52 | $0,92 |
| Polarity | P-channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Gate-Source Voltage (VGS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) at TC=25C | -60 A | — |
| Power Dissipation (PD) at TC=25C | 100 W | — |
| RDS(on) Max at VGS=-10V | 0.0112 ohm | — |
| Input Capacitance (Ciss) | 7760 pF | 7760 pF typ |
| FET Type | MOSFET P-Channel, Metal Oxide | — |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | DPAK+ (TO-252) | DPAK+ (TO-252-3) |
| Betriebstemperatur | -55C to +150C (Tj) | — |
| Technology | Toshiba U-MOS (silicon) | Silicon U-MOS (trench) |
| MSL-Level | 1 (unlimited) | — |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualified | Yes (per Toshiba product positioning) | — |
| Transistortyp | — | P-Channel MOSFET |
| Drain-Source Voltage (VDSS) | — | -60 V |
| Gate-Source Voltage (VGSS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) | — | -60 A (Tc) |
| Power Dissipation (PD) | — | 100 W (Tc) |
| RDS(ON) Max @ VGS = -10 V | — | 14.5 mOhm |
| RDS(ON) Typ @ VGS = -10 V | — | 11.2 mOhm |
| Gate Threshold Voltage (Vth) | — | -3.0 V typ (VDS = -1 mA, enhancement mode) |
| Leakage Current (IDSS) Max | — | -10 uA (VDS = -40 V) |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 |