TJ60S06M3LT6L1.NQ vs TJ60S06M3L(T6L1NQ Comparación
Comparación detallada lado a lado de TJ60S06M3LT6L1.NQ por Toshiba y TJ60S06M3L(T6L1NQ por Toshiba. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ ActivoComparación de especificaciones
| Parámetro | TJ60S06M3LT6L1.NQ | TJ60S06M3L(T6L1NQ |
|---|---|---|
| Marca | Toshiba | Toshiba |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,52 | $0,92 |
| Polarity | P-channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Gate-Source Voltage (VGS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) at TC=25C | -60 A | — |
| Power Dissipation (PD) at TC=25C | 100 W | — |
| RDS(on) Max at VGS=-10V | 0.0112 ohm | — |
| Input Capacitance (Ciss) | 7760 pF | 7760 pF typ |
| FET Type | MOSFET P-Channel, Metal Oxide | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado | DPAK+ (TO-252) | DPAK+ (TO-252-3) |
| Temperatura de funcionamiento | -55C to +150C (Tj) | — |
| Technology | Toshiba U-MOS (silicon) | Silicon U-MOS (trench) |
| Nivel MSL | 1 (unlimited) | — |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per Toshiba product positioning) | — |
| Tipo de transistor | — | P-Channel MOSFET |
| Drain-Source Voltage (VDSS) | — | -60 V |
| Gate-Source Voltage (VGSS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) | — | -60 A (Tc) |
| Power Dissipation (PD) | — | 100 W (Tc) |
| RDS(ON) Max @ VGS = -10 V | — | 14.5 mOhm |
| RDS(ON) Typ @ VGS = -10 V | — | 11.2 mOhm |
| Gate Threshold Voltage (Vth) | — | -3.0 V typ (VDS = -1 mA, enhancement mode) |
| Leakage Current (IDSS) Max | — | -10 uA (VDS = -40 V) |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 |