TJ60S06M3LT6L1.NQ vs TJ60S06M3L(T6L1NQ 对比
详细并排对比 TJ60S06M3LT6L1.NQ 出自 Toshiba 和 TJ60S06M3L(T6L1NQ 出自 Toshiba。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | TJ60S06M3LT6L1.NQ | TJ60S06M3L(T6L1NQ |
|---|---|---|
| 品牌 | Toshiba | Toshiba |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.52 | $0.92 |
| Polarity | P-channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Gate-Source Voltage (VGS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) at TC=25C | -60 A | — |
| Power Dissipation (PD) at TC=25C | 100 W | — |
| RDS(on) Max at VGS=-10V | 0.0112 ohm | — |
| Input Capacitance (Ciss) | 7760 pF | 7760 pF typ |
| FET Type | MOSFET P-Channel, Metal Oxide | — |
| 安装类型 | Surface Mount | Surface Mount |
| 封装 | DPAK+ (TO-252) | DPAK+ (TO-252-3) |
| 工作温度 | -55C to +150C (Tj) | — |
| Technology | Toshiba U-MOS (silicon) | Silicon U-MOS (trench) |
| MSL 等级 | 1 (unlimited) | — |
| RoHS 状态 | Compliant | Compliant |
| Automotive Qualified | Yes (per Toshiba product positioning) | — |
| 晶体管类型 | — | P-Channel MOSFET |
| Drain-Source Voltage (VDSS) | — | -60 V |
| Gate-Source Voltage (VGSS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) | — | -60 A (Tc) |
| Power Dissipation (PD) | — | 100 W (Tc) |
| RDS(ON) Max @ VGS = -10 V | — | 14.5 mOhm |
| RDS(ON) Typ @ VGS = -10 V | — | 11.2 mOhm |
| Gate Threshold Voltage (Vth) | — | -3.0 V typ (VDS = -1 mA, enhancement mode) |
| Leakage Current (IDSS) Max | — | -10 uA (VDS = -40 V) |
| 工作温度范围 | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 |