W989D6DBGX6I-TR vs W989D6DBGX6I Comparison

Detailed side-by-side comparison of W989D6DBGX6I-TR by Winbond and W989D6DBGX6I by Winbond. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter W989D6DBGX6I-TR W989D6DBGX6I
Brand Winbond Winbond
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $6.10
Memory Type Mobile LPSDR SDR SDRAM (Volatile DRAM) Mobile LPSDR SDRAM
Density 512 Mbit —
Organization 32M x 16 (16-bit data bus) 32M words x 16 bit
Maximum Clock Frequency 166 MHz 166 MHz
Clock Access Time 5 ns —
Supply Voltage (VDD/VDDQ) 1.8 V (typical); 1.7 V to 1.95 V range —
Number of Internal Banks 4 —
CAS Latency (CL) 2 / 3 selectable via MRS —
Burst Length 1, 2, 4, 8, full page 1, 2, 4, 8, Full Page
Refresh Window 1024 cycles / 16 ms —
Operating Temperature -40C to +85C (Industrial) -40C to +85C (Industrial)
Package 54-ball VFBGA, 8 mm x 9 mm 54-ball VFBGA (8 mm x 9 mm)
Process Technology 46 nm 46 nm CMOS
Mounting Type Surface Mount Surface Mount
Packaging Option Tape & Reel (-TR suffix) —
Low-Power Modes Partial-Array Self-Refresh (PASR), Deep Power-Down (DPD) —
RoHS Status Compliant Compliant
MSL Level 3 (168 hours) 3
Lead-Free Yes —
Memory Density — 512 Mbit (32M x 16)
Data Bus Width — 16 bit
Access Time — 5 ns
Supply Voltage VDD — 1.8 V (typ)
Interface Type — Parallel, LVCMOS
Number of Banks — 4
CAS Latency — Programmable 2 or 3
Self-Refresh — Yes (with PASR)
Deep Power-Down — Yes
Ball Pitch — 0.8 mm

Datasheets & Resources

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