W989D6DBGX6I-TR vs W989D6DBGX6I 对比
详细并排对比 W989D6DBGX6I-TR 出自 Winbond 和 W989D6DBGX6I 出自 Winbond。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | W989D6DBGX6I-TR | W989D6DBGX6I |
|---|---|---|
| 品牌 | Winbond | Winbond |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.18 | $6.10 |
| 存储器类型 | Mobile LPSDR SDR SDRAM (Volatile DRAM) | Mobile LPSDR SDRAM |
| Density | 512 Mbit | — |
| 存储组织 | 32M x 16 (16-bit data bus) | 32M words x 16 bit |
| 最大时钟频率 | 166 MHz | 166 MHz |
| Clock Access Time | 5 ns | — |
| Supply Voltage (VDD/VDDQ) | 1.8 V (typical); 1.7 V to 1.95 V range | — |
| Number of Internal Banks | 4 | — |
| CAS Latency (CL) | 2 / 3 selectable via MRS | — |
| Burst Length | 1, 2, 4, 8, full page | 1, 2, 4, 8, Full Page |
| Refresh Window | 1024 cycles / 16 ms | — |
| 工作温度 | -40C to +85C (Industrial) | -40C to +85C (Industrial) |
| 封装 | 54-ball VFBGA, 8 mm x 9 mm | 54-ball VFBGA (8 mm x 9 mm) |
| Process Technology | 46 nm | 46 nm CMOS |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging Option | Tape & Reel (-TR suffix) | — |
| Low-Power Modes | Partial-Array Self-Refresh (PASR), Deep Power-Down (DPD) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 3 (168 hours) | 3 |
| Lead-Free | Yes | — |
| Memory Density | — | 512 Mbit (32M x 16) |
| 数据总线宽度 | — | 16 bit |
| Access Time | — | 5 ns |
| Supply Voltage VDD | — | 1.8 V (typ) |
| 接口类型 | — | Parallel, LVCMOS |
| Number of Banks | — | 4 |
| CAS 延迟 | — | Programmable 2 or 3 |
| Self-Refresh | — | Yes (with PASR) |
| Deep Power-Down | — | Yes |
| Ball Pitch | — | 0.8 mm |