W989D6DBGX6I vs W989D6DBGX6I-TR Comparison

Detailed side-by-side comparison of W989D6DBGX6I by Winbond and W989D6DBGX6I-TR by Winbond. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter W989D6DBGX6I W989D6DBGX6I-TR
Brand Winbond Winbond
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.10 $1.18
Memory Type Mobile LPSDR SDRAM Mobile LPSDR SDR SDRAM (Volatile DRAM)
Memory Density 512 Mbit (32M x 16) —
Organization 32M words x 16 bit 32M x 16 (16-bit data bus)
Data Bus Width 16 bit —
Maximum Clock Frequency 166 MHz 166 MHz
Access Time 5 ns —
Supply Voltage VDD 1.8 V (typ) —
Interface Type Parallel, LVCMOS —
Number of Banks 4 —
CAS Latency Programmable 2 or 3 —
Burst Length 1, 2, 4, 8, Full Page 1, 2, 4, 8, full page
Self-Refresh Yes (with PASR) —
Deep Power-Down Yes —
Process Technology 46 nm CMOS 46 nm
Operating Temperature -40C to +85C (Industrial) -40C to +85C (Industrial)
Package 54-ball VFBGA (8 mm x 9 mm) 54-ball VFBGA, 8 mm x 9 mm
Ball Pitch 0.8 mm —
Mounting Type Surface Mount Surface Mount
MSL Level 3 3 (168 hours)
RoHS Status Compliant Compliant
Density — 512 Mbit
Clock Access Time — 5 ns
Supply Voltage (VDD/VDDQ) — 1.8 V (typical); 1.7 V to 1.95 V range
Number of Internal Banks — 4
CAS Latency (CL) — 2 / 3 selectable via MRS
Refresh Window — 1024 cycles / 16 ms
Packaging Option — Tape & Reel (-TR suffix)
Low-Power Modes — Partial-Array Self-Refresh (PASR), Deep Power-Down (DPD)
Lead-Free — Yes

Datasheets & Resources

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