W989D6DBGX6I vs W989D6DBGX6I-TR Vergleich
Detaillierter Direktvergleich von W989D6DBGX6I von Winbond und W989D6DBGX6I-TR von Winbond. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | W989D6DBGX6I | W989D6DBGX6I-TR |
|---|---|---|
| Marke | Winbond | Winbond |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,10 | $1,18 |
| Speichertyp | Mobile LPSDR SDRAM | Mobile LPSDR SDR SDRAM (Volatile DRAM) |
| Memory Density | 512 Mbit (32M x 16) | — |
| Speicherorganisation | 32M words x 16 bit | 32M x 16 (16-bit data bus) |
| Datenbusbreite | 16 bit | — |
| Maximale Taktfrequenz | 166 MHz | 166 MHz |
| Access Time | 5 ns | — |
| Supply Voltage VDD | 1.8 V (typ) | — |
| Schnittstellentyp | Parallel, LVCMOS | — |
| Number of Banks | 4 | — |
| CAS-Latenz | Programmable 2 or 3 | — |
| Burst Length | 1, 2, 4, 8, Full Page | 1, 2, 4, 8, full page |
| Self-Refresh | Yes (with PASR) | — |
| Deep Power-Down | Yes | — |
| Process Technology | 46 nm CMOS | 46 nm |
| Betriebstemperatur | -40C to +85C (Industrial) | -40C to +85C (Industrial) |
| Gehäuse | 54-ball VFBGA (8 mm x 9 mm) | 54-ball VFBGA, 8 mm x 9 mm |
| Ball Pitch | 0.8 mm | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 3 | 3 (168 hours) |
| RoHS-Status | Compliant | Compliant |
| Density | — | 512 Mbit |
| Clock Access Time | — | 5 ns |
| Supply Voltage (VDD/VDDQ) | — | 1.8 V (typical); 1.7 V to 1.95 V range |
| Number of Internal Banks | — | 4 |
| CAS Latency (CL) | — | 2 / 3 selectable via MRS |
| Refresh Window | — | 1024 cycles / 16 ms |
| Packaging Option | — | Tape & Reel (-TR suffix) |
| Low-Power Modes | — | Partial-Array Self-Refresh (PASR), Deep Power-Down (DPD) |
| Lead-Free | — | Yes |