YZ48G16V-F9HPI-M vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of YZ48G16V-F9HPI-M by Loongtion and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | YZ48G16V-F9HPI-M | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Loongtion | Samsung Electronics |
| Category | DRAM | DRAM |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 2666 Mbps |
| Package | FBGA96 | 96FBGA |
| Operating Temperature Range | -40°C to +85°C | — |
| Supply Voltage | 1.2 V | — |
| Interface | DDR4 | DDR4 (parallel, double data rate) |
| Pin Count | 96 | — |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| RoHS Status | Compliant | Compliant (per JLCPCB listing: ROHS) |
| Industrial Grade | Yes | — |
| Compatible with | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B | — |
| Data Bus Width | 16 bits | — |
| Refresh | Auto-refresh | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Temperature | — | 0C to +85C |
| Die Generation | — | B-die |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |