YZ48G16V-F9HPI-M vs K4A8G165WB-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci YZ48G16V-F9HPI-M disebabkan oleh Loongtion dan K4A8G165WB-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | YZ48G16V-F9HPI-M | K4A8G165WB-BCTD |
|---|---|---|
| Merek | Loongtion | Samsung Electronics |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 512M x 16 |
| Kadar Data | 3200 MT/s | 2666 Mbps |
| Kemasan | FBGA96 | 96FBGA |
| Gambaran Suhu Operasi | -40°C to +85°C | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Antaramuka | DDR4 | DDR4 (parallel, double data rate) |
| Kiraan Pin | 96 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Status RoHS | Compliant | Compliant (per JLCPCB listing: ROHS) |
| Industrial Grade | Yes | — |
| Compatible with | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B | — |
| Lebar Bus Data | 16 bits | — |
| Refresh | Auto-refresh | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Suhu Operasi | — | 0C to +85C |
| Die Generation | — | B-die |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |