Dioden
Produkte (171)
BB208-02,115 - Varactor Diode 10V SOD-523 | NXP Semiconductors
The NXP Semiconductors BB208-02,115 is a single low-voltage variable capacitance diode (varactor / varicap) rated for a maximum reverse voltage of 10 V, supplied in a compact 2-terminal SOD-523 (SC-79) surface-mount package on tape and reel. It is designed for voltage-controlled tuning of resonant circuits in RF applications. A varactor diode, also called a variable capacitance diode or varicap, is a PN-junction diode operated in reverse bias so that its junction capacitance varies predictably with the applied voltage. Within the discrete semiconductor hierarchy, it belongs to the diode family and serves as the tuning element inside voltage-controlled oscillators (VCOs), RF filters, and antenna matching networks, forming part of the broader radio-frequency component chain. Key features of the BB208-02,115 include its low-voltage 10 V rating suited to battery-powered and portable RF designs, surface-mount SOD-523 packaging that minimizes board area and parasitic inductance, an operating temperature range of -55C to +125C (TJ) for industrial environments, and lead-free RoHS-compliant construction indicated by the ,115 ordering suffix. The device uses a silicon junction optimized for a well-defined capacitance-versus-voltage (C-V) characteristic, allowing designers to predict tuning range across the control voltage sweep. Because the part is a two-terminal passive-type semiconductor, PCB layout directly determines its effective Q factor: short, wide traces and minimal series inductance preserve tuning resolution at VHF and UHF frequencies. Typical applications include VCO tuning in wireless transmitters, electronically tuned RF filters, frequency modulation of low-power oscillators, and antenna tuners in consumer and industrial radios. Design consideration: always verify the junction capacitance and capacitance ratio figures against the manufacturer datasheet before committing a layout, since the BB208 family includes multiple capacitance-range suffixes. This page synthesizes distributor pricing from LCSC, DigiKey and Mouser, NXP product-page availability data, and drop-in alternative analysis in a single reference not found on any individual distributor page.
BB208-02,135 - 10V Low Voltage Varactor Diode | NXP Semiconductors
The NXP Semiconductors BB208-02,135 is a low-voltage variable capacitance (varactor) diode fabricated in planar silicon technology and housed in an ultra-small SOD-523 (SC-79) surface-mount plastic package. It offers a nominal capacitance of 5.4 pF measured at 7.5 V reverse bias (1 MHz), a capacitance ratio of 5.2 (C1/C7.5 condition per distributor data), and a maximum reverse voltage of 10 V, with junction operating temperatures from -55C to +125C. A varactor diode, also called a variable capacitance diode or varicap, is a semiconductor device that exploits the voltage-dependent depletion-layer capacitance of a reverse-biased PN junction. Within the power and signal-chain hierarchy, it belongs to the discrete semiconductor family and functions as a voltage-controlled capacitor for tuning circuits, sitting alongside other RF passives such as inductors and fixed capacitors in the front end of tuners, oscillators and filters. Key features of the BB208-02 include excellent CV linearity for predictable tuning curves, a high capacitance ratio enabling wide tuning ranges from a small control-voltage swing, and very low series resistance which preserves Q factor in resonant circuits. The ultra-small SOD-523 footprint conserves PCB area in compact RF assemblies such as antenna tuners and VCO modules. Technically, the planar epitaxial structure provides a sharp, repeatable junction profile, delivering a smooth capacitance-versus-voltage characteristic that simplifies linearizing circuitry in PLL-based frequency synthesizers. Distributor listings such as Utmel and FindIC confirm the single-diode configuration, 2 terminations and dual flat terminal form. Typical applications include voltage-controlled oscillators (VCOs), electronically tuned LC filters, RF tuner bandpass circuits, and PLL loop tuning elements in communication equipment operating at low supply voltages. In design, keep the tuning-voltage source low-noise and well decoupled, since varactor bias noise appears directly as oscillator phase noise; also observe the 10 V peak reverse voltage limit. This page synthesizes distributor pricing, availability, and drop-in alternative analysis not found in the manufacturer datasheet, providing an engineering-oriented selection resource.
BB208-03,115 - 10V Varactor Diode SOD-323 | NXP Semiconductors
The NXP Semiconductors BB208-03,115 is a low-voltage variable capacitance diode (varactor) rated for a repetitive reverse voltage of 10 V, offering a capacitance of approximately 5.4 pF at 7.5 V and 1 MHz with a capacitance ratio (C1/C7.5) of 5.2, housed in the SOD-323 (SC-76) surface-mount plastic package. A varactor diode, also called a varicap or variable capacitance diode, is a semiconductor device that exploits the voltage-dependent depletion-layer capacitance of a reverse-biased PN junction. Within the hierarchy of diodes, it belongs to the family of RF and tuning diodes, used as a voltage-controlled capacitor rather than a rectifier. Its capacitance decreases as reverse bias increases, enabling electronic tuning of LC resonant circuits without any moving parts. The BB208-03 is fabricated using NXP planar technology, which provides tight capacitance distribution and stable tuning characteristics over life and temperature. Key differentiating parameters include a maximum junction capacitance Cd of 23.2 pF at low reverse bias, an average forward current rating of 20 mA, and a wide operating temperature range of -55°C to +125°C, making it suitable for both consumer and industrial RF environments. The small SOD-323 body measures roughly 1.7 mm x 1.25 mm x 0.95 mm with a 1.3 mm lead pitch, supporting high-density PCB layouts. Because the device is optimized for low-voltage operation, it pairs naturally with battery-powered and low-supply-voltage tuning circuits where higher-voltage varactors cannot reach their tuning range. Typical applications include VCO (voltage-controlled oscillator) tuning in RF transceivers, electronically tuned LC filters, antenna impedance matching networks, and frequency modulation circuits in communications equipment. Design-wise, keep the tuning voltage well within the 10 V reverse rating, use high-value series resistors to isolate the tuning node from oscillator noise, and account for the capacitance-temperature drift of the planar junction in narrow-band designs. This page synthesizes distributor availability data, verified datasheet parameters, and practical design guidance for the BB208-03,115 not consolidated on the manufacturer product page.
BZT52B15-E3-18 - 15V 410mW ±2% SOD-123 Zener Diode | Vishay
The Vishay BZT52B15-E3-18 is a 15 V small-signal Zener diode with ±2% voltage tolerance, 410 mW power dissipation, and a compact SOD-123 surface-mount package. It is part of Vishay's BZT52B-Series graded according to the international E24 standard, offering nominal Zener voltages from 2.4 V to 75 V with specified test currents of 2.5 mA and 5 mA depending on the variant. A Zener diode is a specialized silicon pn-junction device engineered to operate in the reverse-breakdown region, where it maintains a nearly fixed cathode-to-anode voltage over a wide range of reverse currents. Diodes in the BZT52B family serve as low-power voltage references, voltage clamps, and over-voltage protectors, sitting within the discrete semiconductor hierarchy: Zener diode → diode → discrete semiconductor → electronic component. They are the workhorse building block of analog front-ends, MCU rails, and protection networks. The BZT52B15-E3-18 delivers a nominal 15 V reference with ±2% tolerance at the specified test current, 410 mW total power dissipation on the recommended 40 mm × 40 mm × 0.022 L pitch PCB footprint, and a low-leakage reverse current suitable for low-power applications. Its planar silicon construction provides stable temperature behavior and long-term reliability in commercial and industrial environments. Typical applications include voltage reference for ADCs and DACs, over-voltage protection for microcontroller I/O lines, precision regulated supplies, and signal clamping in sensor-conditioning circuits. Its SOD-123 outline allows direct substitution in tight PCB layouts where a 15 V rail must be derived locally without a switching regulator. When designing with this part, derate power linearly above 25 °C ambient and verify the dynamic Zener impedance at the actual operating current — Zener voltage shifts slightly with current and must be carefully tuned to the application. Place the diode close to the protected node and keep trace inductance short to maximize clamping effectiveness. This page synthesizes distributor stock and pricing from leading distributors (DigiKey, Mouser, Arrow, LCSC, TTI), pin-compatible drop-in alternatives from Vishay's own BZT52B family and cross-brand sources (Nexperia, MCC, Diotec), and practical design notes not found in the manufacturer datasheet alone.
BZT52C8V2LP - 8.2V 250mW Zener Diode, DFN1006-2 | Diodes Incorporated
The Diodes Incorporated BZT52C8V2LP is a surface-mount Zener diode rated at 8.2V nominal Zener voltage with ±6% tolerance and 250mW power dissipation, housed in an ultra-compact X1-DFN1006-2 (1.0mm x 0.6mm x 0.5mm) leadless package. The device uses planar die construction and is specified for automated assembly processes. A Zener diode is a specialized pn-junction diode engineered to operate in reverse breakdown at a precisely controlled voltage. Unlike a rectifier diode that is damaged by reverse breakdown, a Zener is designed to repeatedly clamp at its nominal Vz, making it the fundamental building block for voltage reference, voltage regulation, and over-voltage protection circuits. Within the broader semiconductor taxonomy, the BZT52C8V2LP belongs to the discrete semiconductor family, specifically the Zener diode sub-category, used as a low-power precision reference in space-constrained designs. Key electrical characteristics include a 8.2V nominal Zener voltage (Vz) at the standard test current, ±6% tolerance across operating conditions, a maximum forward voltage (Vf) of 900 mV at 10 mA, and a 250 mW continuous power dissipation rating. The X1-DFN1006-2 footprint enables placement in mobile phones, wearables, hearing aids, IoT sensors, and other miniaturized products where every square millimeter counts. The planar die construction provides stable breakdown characteristics and tight tolerance over temperature, while the leadless DFN package minimizes parasitic inductance - useful for transient suppression on data lines and low-voltage rails. Operating and storage temperature ranges span -55C to +150C, suiting both consumer and industrial environments. Typical applications include voltage clamping on low-voltage DC rails in portable devices, secondary protection on USB-C and HDMI data lines, precision reference for ADCs and DACs in mixed-signal ICs, and over-voltage protection on lithium-ion battery management systems. When designing with this device, derate power dissipation to 70 mW or less to keep junction temperature rise acceptable in the 0.5mm-tall DFN package. Always place the Zener directly across the protected node with the shortest possible trace to ground, since lead inductance can defeat clamping during fast transients. This page synthesizes distributor stock data, same-package drop-in alternatives, and PCB-level design notes that go beyond the manufacturer datasheet to support faster, more reliable sourcing decisions.
BZX585-B6V8 - 6.8V 300mW Zener Diode ±2% SOD-523 | Nexperia
The Nexperia BZX585-B6V8 is a low-power voltage regulator Zener diode housed in an ultra-small SOD-523 surface-mount plastic package, delivering a nominal Zener voltage of 6.8 V with a ±2% tolerance and a total power dissipation of 300 mW. It is part of the BZX585 series, which spans 37 nominal working voltages from 2.4 V to 75 V and is qualified to the normalized E24 (BZX585-B, ±2%) and E24 (BZX585-C, ±5%) tolerance ranges for precision voltage reference design. The SOD-523 footprint measures approximately 1.6 mm x 0.8 mm x 0.6 mm, making it one of the smallest Zener packages in volume production. A Zener diode is a specialized PN-junction diode engineered to operate in the reverse-breakdown (Zener) region, where the voltage across the device remains nearly constant over a wide range of reverse currents. This characteristic makes Zener diodes ideal as shunt voltage regulators, reference elements, and overvoltage protectors in analog and mixed-signal circuits. Within the broader semiconductor taxonomy, the BZX585-B6V8 sits at: Zener diode → voltage regulator diode → discrete semiconductor → diode → semiconductor device. Key features of the BZX585-B6V8 include a maximum working voltage tolerance of ±2% (E24 normalized), a non-repetitive peak reverse power dissipation rating suitable for transient clamping, and a low-leakage planar construction that minimizes standby current in battery-powered designs. The device is supplied on 8 mm tape and reel for high-speed automated pick-and-place assembly. The planar passivated die architecture yields stable Zener voltage across temperature and current, with a typical temperature coefficient consistent with the 5.6–6.8 V range where the Zener mechanism transitions from true Zener breakdown to avalanche multiplication. This range typically exhibits a near-zero temperature coefficient, making 6.8 V parts especially useful as low-drift references. Typical applications include portable and wearable device voltage references, USB and HDMI port protection, ADC/DAC reference rails, microcontroller supervisor rails, RF transceiver local-oscillator supply filtering, and automotive infotainment analog signal conditioning. The 6.8 V nominal is also close to common logic-interface clamping levels for transient voltage suppressor (TVS) duty in conjunction with series resistors. When designing with this part, observe the 300 mW total power dissipation limit and derate appropriately above 25 °C. A series resistor sized to limit Zener current to a few milliamps in regulation, plus a few milliamps of margin under worst-case input and load conditions, will keep the junction temperature within safe limits and ensure long-term stability. This page consolidates distributor pricing, drop-in alternatives, and design notes not typically aggregated on a single manufacturer datasheet, with the goal of accelerating BOM validation and second-source selection for production designs.
BZX84B10-7-F - 10V 300mW Precision Zener Diode | Diodes Inc
The Diodes Incorporated BZX84B10-7-F is a surface-mount precision Zener diode rated at 10 V nominal working voltage with ±2% tolerance and 350 mW power dissipation, housed in a 3-pin SOT-23 package. It belongs to the BZX84B series, which provides tight-tolerance voltage regulation in a compact SMD footprint. According to the Diodes Incorporated datasheet, the device is qualified to AEC-Q101 standards for high reliability, making it suitable for both commercial and automotive-grade designs. A Zener diode is a specialized PN-junction diode engineered to operate in the reverse-breakdown (Zener) region, providing a stable reference voltage that is largely independent of current and temperature. Within the broader semiconductor taxonomy, Zener diodes sit under discrete semiconductors -> diodes -> voltage references. They are widely used as shunt regulators, voltage clamps, and precision reference elements where a low-cost, low-noise DC reference is required. Key features of the BZX84B10-7-F include a nominal Zener voltage of 10 V at 5 mA test current, ±2% voltage tolerance (BZX84B-series grade), low leakage current, and a maximum power dissipation of 350 mW on a standard FR-4 PCB. The SOT-23 package supports automated assembly processes and is fully RoHS compliant with halogen-free and antimony-free "Green Device" construction. Internally, the BZX84B10-7-F uses a diffused silicon PN junction optimized for low dynamic impedance at the rated test current, delivering tight voltage regulation across the specified operating range. The -7-F suffix denotes the 7-inch reel packaging format compatible with automated pick-and-place equipment, while the -F designation confirms lead-free, fully RoHS-compliant terminal finish. Typical applications include voltage reference circuits in analog front-ends, ADC/DAC reference rails, overvoltage protection in portable electronics, switching-mode power supply feedback networks, and automotive ECU sensor biasing. The wide tolerance grade and AEC-Q101 qualification make the part suitable for harsh-environment and safety-critical designs. When designing with this Zener, ensure the total power dissipation (P = VZ × IZ) stays below 350 mW derated for ambient temperature, and place a series resistor sized to limit the maximum current under worst-case input voltage conditions. The cathode is identified by the marked bar on the SOT-23 package. This page synthesizes distributor pricing, drop-in alternatives from cross-reference data, and practical design notes that go beyond the manufacturer datasheet to accelerate your component selection.
BZX884-C8V2 - 8.2V 250mW Zener Diode SOD882 | Nexperia
The Nexperia BZX884-C8V2 is a general-purpose Zener diode housed in an SOD882 (DFN1006-2) leadless ultra-small Surface-Mounted Device (SMD) plastic package, with a nominal Zener voltage of 8.2 V and ±5% tolerance (C-series suffix). It supports a total power dissipation of Ptot ≤ 250 mW and is intended for general-purpose voltage reference and clamping tasks where PCB real estate is at a premium. A Zener diode is a specialized silicon pn-junction diode engineered to operate in the reverse-breakdown region, where it maintains a nearly constant voltage across its terminals despite substantial current variation. Zeners sit in the discrete-semiconductor hierarchy as diodes -> semiconductor devices, and they function as single-junction voltage-reference elements within the broader power-management and signal-conditioning IC taxonomy. The BZX884-C8V2's 1.0 mm x 0.6 mm x 0.5 mm footprint occupies only about 1.17 mm² of board space, making it the functional equivalent of a SOT23 Zener at roughly one-third the footprint. Key features of the BZX884-C8V2 include a working-voltage range that covers the E24 standard 2.4 V to 75 V across the BZX884 family, ±5% voltage tolerance, and a low-leakage, ultra-small plastic package compatible with high-density SMT assembly lines. The non-repetitive peak reverse power dissipation and thermal behavior are characterized for general-purpose clamp and reference designs. Technically, the BZX884-C8V2 is fabricated using Nexperia's planar Zener process on a leadless SOD882 substrate. The diode exhibits the classic Zener-versus-avalanche transition behavior around 5.6 V; at 8.2 V the breakdown mechanism is dominantly avalanche, which gives a positive temperature coefficient on Vz and good stability for reference-rail applications. The hermetic leadless package also provides low parasitic inductance, making it usable as a sub-ns transient suppressor. Typical applications include voltage reference for ADCs and DACs in portable/wearable products, logic-level clamping on data lines (USB, HDMI, GPIO), overvoltage protection on low-power DC rails, handheld medical and IoT sensor boards, and any 8.2 V reference point in automotive and industrial subsystems. When designing with this part, choose series resistor values that keep Iz below the maximum rated and below to prevent failure, and respect the 250 mW Ptot limit at the chosen ambient temperature. This page synthesizes distributor pricing, drop-in BZX884 same-package alternatives, and practical design notes not found on a single distributor product page.
CDBQR0230L - 30V 200mA Low-VF DFN Schottky | Comchip
The Comchip Technology CDBQR0230L is a surface-mount Schottky diode rated 30 V reverse voltage and 200 mA average forward current, packaged in a compact 0402 (SOD-923F equivalent) leadless DFN case. It is specified as a low forward voltage (Low VF) Schottky barrier diode, intended for small-signal switching, clamping, and rectification tasks in densely populated PCBs. The 0402 footprint occupies only 1.0 mm x 0.5 mm board area, enabling placement in space-constrained designs such as wearables, hearing aids, and portable instrumentation. A Schottky barrier diode is a majority-carrier semiconductor device formed by a metal-semiconductor junction. Unlike PN-junction diodes that suffer from a 0.6-0.7 V forward drop, Schottky diodes exhibit a much lower forward voltage (typically 0.3-0.5 V) and very fast switching because there is no minority-carrier charge storage. Within the broader discrete-semiconductor taxonomy, the CDBQR0230L sits as: Schottky diode -> rectifier/signal diode -> discrete semiconductor -> electronic component. This category role makes it a foundational building block in nearly every power-handling and signal-conditioning circuit. Key differentiating features of the CDBQR0230L include its low forward voltage drop (specific value is marked [DATA_NEEDED] because the verified web snippet does not quote a numerical VF figure - typical for this rating is 0.35-0.50 V at 10 mA), a peak repetitive reverse voltage (VRRM) of 30 V suitable for 5 V and 12 V rails, a 200 mA average rectified forward current suitable for low-power rails, and a leadless SOD-923F/0402 molded plastic case. The majority-carrier conduction architecture results in negligible reverse recovery time, making the part attractive for high-frequency switching and OR-ing applications. The 0402 (SOD-923F) DFN package has an extremely low profile (~0.4-0.5 mm thickness), with terminations on the long edges that act as the anode and cathode. This package style supports reflow soldering at peak temperatures up to 260 C per JEDEC J-STD-020 and is fully RoHS-compatible. Compared with a glass-packaged SOD-123 Schottky of the same rating, the CDBQR0230L occupies roughly one-quarter of the PCB footprint. Typical applications for the CDBQR0230L include low-current power-OR-ing of dual USB supplies, freewheeling protection across relay coils in 12 V automotive subsystems, signal clamping on data lines up to 30 V, reverse-polarity protection for low-current loads (under 200 mA), and low-loss rectification in portable solar-powered sensor nodes. The low VF minimizes wasted power in series-pass protection circuits. When designing with the CDBQR0230L, observe the 200 mA average forward-current rating and ensure adequate thermal copper pour on the anode/cathode pads to spread the small but non-zero conduction loss. For reverse-polarity protection, confirm that the load's inrush current does not exceed the diode's IFSM surge capability. Avoid using the part above its maximum rated VRRM of 30 V, especially in inductive-clamp circuits where transient overshoot can easily exceed DC ratings. This page consolidates distributor pricing, verified drop-in alternatives, and practical design notes into a single resource - a synthesis not available from the manufacturer datasheet alone.
CDBQR0230L-HF - 30V 200mA Schottky Diode | Comchip | 0402
The Comchip Technology CDBQR0230L-HF is a 30V, 200mA surface-mount Schottky barrier diode housed in a compact 0402/SOD-923F package. It features a low forward voltage drop and fast switching characteristics typical of Schottky technology, with a VR (reverse voltage) rating of 30V and an Io (average rectified output current) rating of 200mA. A Schottky barrier diode is a semiconductor device formed by a metal-semiconductor junction rather than a PN junction, which produces a lower forward voltage drop (typically 0.3V to 0.5V vs 0.7V for a silicon diode) and faster switching speed at the expense of higher reverse leakage current. In the power management hierarchy, Schottky diodes sit under discrete semiconductors -> diodes -> rectifier diodes -> Schottky diodes -> power management components, and are widely used for low-voltage rectification, reverse polarity protection, and signal clamping. Key features of the CDBQR0230L-HF include its ultra-small 0402 footprint (SOD-923F), which is among the smallest standard diode packages, RoHS compliance for environmental compatibility, and a low forward voltage drop that minimizes conduction losses in low-voltage circuits. The device is suitable for high-density PCB designs where board space is at a premium. The CDBQR0230L-HF uses Schottky barrier technology with a low barrier height, enabling fast switching and low forward voltage. Its compact form factor makes it ideal for portable and wearable electronics where every square millimeter of PCB counts. The 30V reverse voltage rating provides adequate headroom for 5V and 12V rails, while the 200mA current rating suits signal-level and low-power applications. Typical applications include reverse polarity protection in portable devices, low-voltage rectification in DC-DC converters, freewheeling diode in small switching circuits, signal clamping and OR-ing, and ESD protection augmentation in USB and battery interfaces. The 0402 footprint is well-suited for hand-held, IoT, and wearable product designs. When designing with the CDBQR0230L-HF, ensure the thermal path is adequate. Although the 200mA current is modest, the small 0402 package has limited thermal dissipation; sustained current near the maximum rating will require attention to copper pad sizing on the PCB. The HF suffix denotes Halogen-Free, which is important for environmental compliance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select the right Schottky diode for compact, low-power designs.
CH320BPT - 40V 350mA Schottky Rectifier SOD-123 | Chenmko
The Chenmko CH320BPT is a surface-mount Schottky barrier rectifier rated at 40 V reverse voltage and 350 mA average rectified forward current, housed in a compact SOD-123 package. The part provides a low forward voltage drop below 0.6 V at 200 mA and supports a peak surge forward current of 1 A, with fast reverse recovery time of approximately 1 ns typical. This combination of low Vf and low junction capacitance makes the CH320BPT particularly suited for high-frequency switching and low-power rectification where Schottky technology is preferred over standard PN-junction rectifiers. A Schottky barrier rectifier is a semiconductor diode that uses a metal-semiconductor junction rather than a PN junction to provide rectification. The absence of minority-carrier recombination gives Schottky diodes a much lower forward voltage drop (typically 0.3 to 0.6 V versus 0.7 to 1.0 V for silicon PN diodes) and a much faster reverse recovery time, typically on the order of nanoseconds. Schottky rectifiers belong to the broader family of discrete diodes within discrete semiconductors, and they are widely used in switch-mode power supplies, freewheeling positions, polarity protection, and DC-DC converter secondary-side rectification where efficiency and switching speed outweigh the need for high reverse breakdown voltage. Key differentiating specifications for the CH320BPT include its 40 V maximum repetitive peak reverse voltage (VRRM), 350 mA average rectified forward current (IF(AV)), 1 A non-repetitive peak forward surge current (IFSM), a forward voltage of 0.6 V maximum at IF = 200 mA, an operating junction temperature range of -55 °C to +125 °C, and surface-mount SOD-123 packaging. The marking code on the device is BA6, which aids in identification after reflow soldering. These parameters collectively place the CH320BPT in the low-power Schottky rectifier category intended for compact, high-density designs. Technically, the device is fabricated using a planar Schottky barrier process on a silicon substrate, with a single die encapsulated in a SOD-123 outline featuring gull-wing leads and an exposed cathode indicator band on the body. The thermal resistance junction-to-ambient depends on PCB copper area; on the standard JEDEC EIA/JESD51 reference board it is approximately 340 °C/W. The cathode is identified by the marked band on the package, and the polarity is critical for correct PCB installation. Typical applications include low-voltage DC-DC buck converters as freewheeling or synchronous-rectifier-replacement diodes, reverse polarity protection on USB and battery charger inputs, low-current power OR-ing for redundant supplies, signal clamping and demodulation in radio receivers, and small solar panel or photovoltaic cell blocking diodes. The 40 V reverse rating covers 12 V and 24 V nominal rails with ample transient margin. Designers should ensure that the average forward current, peak surge current, and reverse voltage limits are respected, particularly during inrush events. Adequate PCB copper pad area is essential for heat dissipation, and the cathode band orientation must match the PCB silkscreen. For high-frequency switching applications, verify that switching losses and junction capacitance are within acceptable limits. This page synthesizes distributor data, voltage and current specifications, and practical design notes for the CH320BPT to give engineers a consolidated view beyond what the manufacturer datasheet alone provides.
CMHZ5242B - 12V 500mW SOD-123 Zener Diode | Central Semiconductor
The Central Semiconductor CMHZ5242B is a surface mount silicon zener diode with a nominal zener voltage of 12 V, a power dissipation rating of 500 mW, and a tolerance of ±5%, packaged in the compact SOD-123 surface mount case with marking code CH2. A zener diode is a voltage-reference device that conducts in reverse breakdown at a precisely defined voltage, making it a fundamental building block within the broader hierarchy of discrete semiconductors -> diodes -> voltage references. Unlike rectifier diodes, zener diodes are deliberately operated in reverse breakdown, where the voltage across the device remains nearly constant over a wide range of reverse current. This property enables simple shunt voltage regulation, voltage clamping, and level shifting without the complexity of an active regulator IC. The CMHZ5242B belongs to Central Semiconductor's CMHZ series, a surface mount family spanning zener voltages from 2.4 V through 75 V (with related datasheet variants listing up to 200 V) at 500 mW, offering designers a single sourcing family for many rail values. The 12 V rating makes it well suited to clamping 12 V logic rails, protecting gates and MOSFET source pins, and generating reference levels for comparator thresholds. Its 5% tolerance covers the B-suffix grade, appropriate for non-critical clamping rather than precision references. Technically, the device is a silicon planar zener operating below roughly 7 V zener ratings via Zener breakdown and above via avalanche breakdown; a 12 V device sits in the transition region where the temperature coefficient is near minimum. Reverse leakage at 85% of rated voltage is in the low microamp range, and dynamic impedance is modest for the family class. Typical applications include input protection for microcontroller GPIOs, MOSFET gate-source clamping in motor-drive circuits, low-cost shunt regulators on 12 V industrial rails, and ESD/overvoltage clamping in consumer and automotive accessory boards. Design consideration: size the series resistor so worst-case load current plus zener bias current keeps power below 500 mW derated for ambient temperature, and note that zener tolerance plus dynamic impedance sets the achievable rail accuracy. This page adds distributor availability, drop-in alternatives across onsemi, Diodes Incorporated, MCCC and Nexperia, and practical design notes not found in the manufacturer datasheet.
CMHZ5242B-BK-PBFREE - 12V 500mW SOD-123 Zener Diode | Central Semiconductor
The Central Semiconductor Corp CMHZ5242B-BK-PBFREE is a 500 mW surface-mount silicon Zener voltage-regulator diode with a nominal Zener voltage of 12 V (11.4 V to 12.6 V at the 20 mA test current, 5% tolerance) in a 2-pin SOD-123 package. A Zener diode is a special class of voltage-regulator diode engineered to conduct in reverse breakdown at a precisely controlled voltage without damage, making it the simplest building block in the voltage-regulator and voltage-reference hierarchy of power-management components. Unlike rectifier diodes, a Zener maintains a nearly constant reverse voltage across a wide range of reverse current, which allows it to clamp, level-shift, or generate reference rails in any circuit needing a fixed potential. Key specifications of the CMHZ5242B include a dynamic impedance (Zzt) of only 30 ohms at the test current, a low reverse leakage of 1 uA at 9.1 V, and a 500 mW power dissipation rating at 25 C, with operation permitted up to a 150 C junction temperature. The B suffix denotes the tighter 5% voltage tolerance over the base CMHZ series, and the PBFREE designation confirms lead-free, RoHS-aligned construction. The device belongs to the CMHZ5221B Series, which spans 2.4 V through 75 V in the same SOD-123 outline, letting designers scale one qualified footprint across an entire range of clamp and reference voltages. Central Semiconductor manufactures the series specifically for industrial, commercial, entertainment and computer applications per the manufacturer datasheet. Typical applications include 12 V rail clamping on industrial inputs, low-current shunt references for op-amp bias, protection of MOSFET gates against overvoltage, and start-up bias supplies in AC-DC converters. Design-wise, derate the 500 mW rating linearly above 25 C and size the series resistor so worst-case current keeps dissipation within limits; the 30 ohm dynamic impedance means regulation quality depends on a healthy bias current. This page adds distributor pricing tiers, drop-in alternatives, and practical design notes that the bare manufacturer datasheet does not provide.
CMHZ5242B-TR-PBFREE - 12V 500mW Zener Diode SOD-123 | Central Semiconductor
The Central Semiconductor CMHZ5242B-TR-PBFREE is a 12 V silicon Zener diode voltage regulator rated for 500 mW power dissipation with a +/-5% tolerance, supplied in a surface mount SOD-123 package on tape and reel. A Zener diode is a diode type engineered to operate in reverse breakdown, where it maintains a nearly constant voltage across its terminals over a wide range of currents. Within the power management hierarchy, it functions as a shunt voltage regulator, a voltage reference, and a clamp or protection element, sitting alongside linear regulators and switching converters in the broader family of voltage regulation solutions. Key features include a nominal Zener voltage of 12 V with an 11.4 V to 12.6 V tolerance window, a specified test current of 20 mA, and a low dynamic impedance of 30 ohms that keeps regulation tight under varying load. Reverse leakage is just 1 uA at 9.1 V, and the device is rated for operation up to 150 C, giving substantial thermal headroom for industrial environments. The PBFREE suffix confirms lead-free, RoHS-oriented construction. The CMHZ5221B Series from Central Semiconductor is manufactured as a high quality surface mount voltage regulator designed for industrial, commercial, entertainment, and computer applications. The silicon planar construction delivers stable breakdown characteristics, and the small SOD-123 outline minimizes board area while supporting automated pick-and-place assembly. Typical applications include 12 V rail clamping and transient suppression, low-current shunt regulation for microcontroller and sensor bias rails, voltage reference generation for comparators, and protection of inputs on industrial and computer equipment. Its 500 mW rating covers most logic-level clamp duties without a heatsink. Design consideration: derate power dissipation above 50 C ambient and size the series resistor so that worst-case input voltage with an open load does not exceed the 500 mW rating; at 12 V this limits continuous Zener current to roughly 40 mA. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
CMHZ5242B-TR-TIN - 12V 500mW SOD-123 Zener Diode | Central Semiconductor
The Central Semiconductor CMHZ5242B-TR-TIN is a 500 mW surface-mount silicon Zener voltage-regulator diode with a nominal Zener voltage of 12 V (11.4 V to 12.6 V at the 20 mA test current, +/-5% tolerance), supplied in the industry-standard SOD-123 small-outline package with tin/lead (TIN/LEAD) plating on tape and reel. The CMHZ5221B Series is designed for voltage regulation, clamping, and reference functions in industrial, commercial, entertainment, and computer applications. A Zener diode is a silicon diode operated in reverse breakdown: above the Zener voltage it conducts while holding the voltage across its terminals nearly constant, making it a simple two-terminal voltage regulator. In the power-management hierarchy, a Zener sits at the simplest end of voltage regulators - before shunt references and LDO linear regulators - and is widely used for bias generation, transient clamping, and low-cost reference levels. Key features of the CMHZ5242B include a 12 V nominal breakdown, a 500 mW power dissipation rating, a 5% voltage tolerance (B-suffix), and a compact SOD-123 footprint compatible with high-density surface-mount assembly. The tin/lead finish supports traditional soldering processes where lead-bearing finishes remain permitted; for RoHS-focused builds, Central offers the otherwise-identical CMHZ5242B TR PBFREE variant. According to the manufacturer datasheet, the CMHZ5221B Series is manufactured as a high-quality voltage regulator in a surface-mount package, and the CMHZ5242B is rated 12 V at 500 mW in the SOD-123 case. Typical applications include 12 V rail clamping, input overvoltage protection for microcontroller GPIO lines, supply-rail bias generation, and consumer/computer board-level voltage reference duties where a discrete two-terminal solution is preferred over an IC reference. Design consideration: the 500 mW rating applies only with adequate PCB copper to keep junction temperature within limits - derate power as ambient temperature rises, and always verify the tolerance band (11.4 V to 12.6 V) against the protection threshold of the circuit being clamped. This page synthesizes distributor pricing, drop-in alternatives, lifecycle status, and practical design notes not found in the manufacturer datasheet, as of 2026-09-14.
CMPZ4621 TR - 3.6V 350mW Low Noise Zener Diode | Central Semiconductor
The Central Semiconductor CMPZ4621 TR is a 3.6V, 350 mW surface mount low-noise silicon Zener diode in a SOT-23 package, with a ±5% voltage tolerance and a specified Zener impedance of 1700 ohm at the test current of 75 mA. A Zener diode is a voltage reference or clamp device that conducts in reverse breakdown at a precisely defined voltage. In the system hierarchy, it belongs to the discrete diode family, sitting below linear voltage regulators and voltage reference ICs: where a regulator uses a reference plus feedback loop, a Zener provides a fixed, simple breakdown voltage directly. Low-noise Zener families like the CMPZ4621 are specifically processed for reduced avalanche noise, which matters when the breakdown voltage feeds a comparator, ADC reference, or bias point. Key features of the CMPZ4621 include a 3.6V nominal Zener voltage with 5% tolerance, 350 mW power dissipation, low reverse breakdown noise for clean biasing, and a compact SOT-23 surface mount footprint compatible with standard reflow assembly. The PBFREE suffix indicates a lead-free, RoHS-oriented build. The 1700 ohm dynamic impedance at 75 mA test current defines how much the clamp voltage moves with current, so designs should bias the diode well above the knee for best regulation. Technically, the device uses a silicon avalanche/planar construction optimized by Central Semiconductor for low noise operation. Avalanche noise scales with breakdown voltage and current; the CMPZ4621's 3.6V rating sits near the low end where noise is naturally modest, and the low-noise process further reduces it versus standard Zeners. Typical applications include voltage clamping on signal lines, low-current voltage references, bias networks for transistor amplifiers, and protection in portable and consumer electronics where the SOT-23 footprint and low cost are advantageous. Design tip: derate the 350 mW rating above 25C ambient and ensure series current limiting keeps worst-case power below the derated curve. This page synthesizes distributor pricing context, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
CMPZDC15V BK - 15V 350mW Dual Zener SOT-23 | Central Semiconductor
The Central Semiconductor CMPZDC15V BK is a dual common-cathode silicon Zener diode rated at 15V nominal Zener voltage and 350mW total power dissipation, housed in a surface-mount SOT-23 (TO-236AB) package. Each Zener element exhibits a nominal VZ of 15V with a tolerance window of 13.8V to 15.6V at the test current, and a maximum reverse current IZM of 11mA. A dual Zener diode integrates two Zener junctions sharing a common terminal in a single three-pin package. In the common-cathode configuration, the shared cathode is tied to one pin while the two anodes form independent inputs, allowing bidirectional voltage clamping of a single node relative to two independent signal or supply lines. Dual Zeners occupy the same PCB footprint as a single transistor, making them a space-efficient sub-circuit within the broader diode and voltage-regulation hierarchy of discrete semiconductors. Key features include the 350mW power dissipation rating, a tightly bounded 13.8V to 15.6V Zener window, and surface-mount construction compatible with automated pick-and-place assembly. The marking code CCY4 allows visual identification on the reel. The device is specified across the CMPZDC2V4 series range of 2.4V through 47V, letting engineers hold a single qualified footprint while scaling clamp voltage. Technologically, the part uses a silicon planar Zener junction optimized for stable regulation and repeatable clamping behavior in industrial and commercial environments. Per the manufacturer, the CMPZDC2V4 series is described as a high-quality voltage regulator for industrial, commercial, entertainment and computer applications. Typical applications include input protection clamps on data and control lines, voltage reference nodes for comparators and ADC thresholds, bias stabilization in analog front ends, and overvoltage protection in consumer entertainment and computer equipment. A key design consideration is that the two Zener elements share one package's thermal budget: simultaneous conduction halves the per-junction power allocation, and derating must respect the 350mW package limit. This page synthesizes datasheet parameters, same-series drop-in alternatives, and practical design notes not found in the raw manufacturer listing.
CMPZDC15V TR - 15V 350mW Dual Common Cathode Zener | Central Semiconductor
The Central Semiconductor CMPZDC15V TR is a 15V, 350 mW dual silicon Zener diode in a common cathode configuration, supplied in tape-and-reel packaging for surface mount assembly. Per the manufacturer datasheet, the zener voltage window at the 11 mA test current is 13.8V to 15.6V, and the device belongs to the CMPZDC2V4 through CMPZDC47V series spanning 2.4V to 47V. A Zener diode is a voltage regulator diode that conducts in reverse breakdown at a precisely defined voltage, holding that voltage across its terminals over a wide range of reverse current. Placing two Zener junctions in a dual, common cathode package lets one three-terminal SOT-23 footprint clamp or regulate two independent nodes, or serve both polarities of a symmetric clamp, saving board area versus two discrete diodes. Key features include the dual common cathode topology, a 350 mW total power dissipation rating, a nominal 15V zener voltage with a 13.8V to 15.6V specification window, and an 11 mA zener test current (IZT) as the reference point for the stated tolerance. The lead-free PBFREE variant (CMPZDC15V TR PBFREE) is listed by Mouser for RoHS-driven designs. The device is fabricated as a silicon planar Zener structure, and its marked part is identified by the marking code CCY4. Because both junctions share a single cathode terminal, thermal coupling between the two diodes is good, giving similar breakdown behavior across both elements. Typical applications include voltage clamping on signal and power nodes in industrial, commercial, entertainment, and computer equipment, as well as bias stabilization and low-current shunt regulation. Designers should size series resistance so that worst-case zener current keeps total dissipation under 350 mW, and verify tolerance budgeting against the 13.8V to 15.6V window rather than the nominal 15V. This page synthesizes distributor inventory data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet.
ES1D - 1A 200V Ultra-Fast Recovery Rectifier SMA | onsemi
The onsemi ES1D is a 1 A ultra-fast recovery rectifier diode rated at 200 V reverse voltage, packaged in a surface-mount DO-214AC (SMA) outline. It is designed for high-efficiency rectification in switch-mode power supplies, freewheeling paths, and DC-DC converter secondary stages where conventional 50 Hz rectifiers would be too slow. Per the onsemi datasheet, the ES1D delivers reverse recovery time (trr) on the order of tens of nanoseconds, dramatically reducing switching loss compared with standard recovery rectifiers. An ultra-fast recovery rectifier is a discrete semiconductor that conducts current in one direction and switches from the conducting to the blocking state in a very short interval, typically under 50 ns. The hyperfast/ultrafast family sits between standard recovery rectifiers (trr in the microsecond range) and Schottky diodes, combining acceptable forward voltage with the high reverse voltage that Schottky parts cannot reach. In the broader taxonomy: rectifier diode -> discrete semiconductor -> power diode -> semiconductor device. ES1-series parts are surface-mount equivalents to legacy axial-lead 1N493x devices. The key features of the ES1D include a 200 V maximum repetitive peak reverse voltage (VRRM), a 1.0 A average rectified forward current at TL = 75 C, a low-profile SMA package suitable for automated pick-and-place, a built-in strain-relief construction, and a glass-passivated junction for long-term reliability. The maximum forward surge current is typically rated at 25-30 A for an 8.3 ms half-sine pulse. The ES1D uses a glass-passivated silicon die with a single P-N junction, optimizing carrier lifetime to achieve fast switching without sacrificing surge capability. Its junction-to-ambient thermal resistance in the SMA footprint (with standard 2 oz copper pad) is roughly 75-85 C/W, so a continuous 1 A load at 150 C junction limit implies a mounting-free operating window; designers should verify copper area for high-duty applications. Typical applications include switch-mode power supply secondary rectifiers, freewheeling diodes across inductive loads, polarity-protection circuits, and high-frequency DC-DC converter outputs. Its ultra-fast recovery also makes it suitable for the output stage of small flyback or forward converters operating at 50-200 kHz. When designing with the ES1D, observe that the 1 A average current rating assumes the lead temperature is held at 75 C or below; on a small SMD footprint the part may derate well before 1 A. For continuous high-current service consider larger SMA-equivalent packages such as SMB (DO-214AA) or SMC (DO-214AB). This page synthesizes verified distributor listings, parametric cross-reference data, and practical SMA-layout design guidance not collected in a single manufacturer datasheet, supporting engineering decisions for sourcing, second-source qualification, and PCB layout.
ES1D-13-F - 200V 1A Super-Fast Rectifier Diode | Diodes Inc
The Diodes Incorporated ES1D-13-F is a surface-mount super-fast recovery rectifier diode rated at 200V reverse voltage and 1A average forward current, housed in a 2-pin SMA (DO-214AC) package. It features a low forward voltage drop of 0.92V typical at 1A and an ultra-fast reverse recovery time of 25ns, enabling high-efficiency rectification in switched-mode power supplies. A rectifier diode is a semiconductor device that allows current to flow in only one direction, converting alternating current (AC) to direct current (DC). Super-fast recovery rectifiers are a specialized subset optimized for high-frequency switching applications where standard rectifier diodes would suffer excessive switching losses. The ES1D sits within the discrete semiconductor > diodes > rectifier > super-fast recovery hierarchy, bridging power management ICs and passives in modern switch-mode designs. Key specifications include a peak repetitive reverse voltage (VRRM) of 200V, average rectified forward current (IF(AV)) of 1.0A, forward voltage (VFM) of 0.92V at 1A and 0.90V at 0.6A, peak reverse current of 5.0µA at 25°C (200µA at 125°C), and total capacitance that supports high-frequency operation. The molded plastic case with solderable matte tin-plated copper lead-frame terminals conforms to MIL-STD-202 mechanical and solderability standards. The SMA footprint is the industry-standard surface-mount rectifier outline, enabling direct drop-in substitution on most PCB land patterns. The ES1D-13-F leverages a glass-passivated die with a low-leakage, high-speed junction, providing 25ns reverse recovery and excellent thermal stability across the -55°C to +150°C operating junction range. With a thermal resistance of approximately 25°C/W on a standard JEDEC test board, the device sustains full 1A operation in moderate ambient conditions without external heatsinking. Typical applications include secondary rectification in AC-DC adapters, freewheeling diodes across switching converters, snubber and clamp circuits, polarity protection in DC distribution, and high-frequency rectification in telecom and industrial SMPS designs. The 25ns recovery time is particularly advantageous at 100kHz+ switching frequencies where slower diodes would dissipate substantial switching power. When designing with the ES1D-13-F, ensure the PCB land pattern conforms to the JEDEC DO-214AC (SMA) footprint and respect the 200V reverse-voltage derating guidelines for reliable operation. For continuous 1A loads, verify junction temperature stays below 150°C by calculating power dissipation (IF × VFM) against the system thermal resistance budget. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
ESH2D-E3/5BT - 200V 2A Ultrafast Rectifier | Vishay SMB
The Vishay ESH2D-E3/5BT is a surface-mount ultrafast plastic rectifier rated at 200 V reverse voltage and 2.0 A average rectified forward current, housed in a DO-214AA (SMB) package with a glass-passivated chip junction. It features an ultrafast reverse recovery time of 25 ns (typical) and a low forward voltage drop of 930 mV at 2 A, making it well suited for high-efficiency switching converters operating in the 100 kHz to 500 kHz range. According to the Vishay ESH2B/ESH2C/ESH2D datasheet, the device meets MSL level 1 per J-STD-020C and is qualified for automated placement. An ultrafast rectifier is a discrete semiconductor that converts alternating current (AC) to direct current (DC) while switching between conducting and blocking states in tens of nanoseconds. Within the broader device taxonomy, an ultrafast rectifier belongs to the rectifier diode family, which sits under discrete semiconductors, power diodes, and switching diodes. Compared with standard recovery rectifiers (trr of several microseconds) and Schottky rectifiers (no reverse recovery but limited to lower voltages), ultrafast rectifiers balance voltage headroom with switching speed, enabling their use as freewheeling and output rectifiers in switch-mode power supplies. Key features include a peak forward surge current capability that supports transient load events, a low forward voltage drop that minimizes conduction loss, and a glass-passivated die that improves moisture resistance and long-term reliability. The SMB (DO-214AA) outline provides a robust mechanical platform with standardized land patterns and is compatible with high-volume reflow soldering. Typical applications include freewheeling diodes across inductive loads, output rectifiers in AC-DC and DC-DC converters, polarity protection, and high-frequency inverter circuits. The 200 V reverse rating comfortably covers 120 V AC rectified rails and 100 V DC bus systems. When designing with this part, derate the forward current for temperatures above 75 C using the published derating curve and provide adequate thermal copper on the SMB land pad. The supplied cathode band on the package marks polarity, and standard JEDEC DO-214AA footprints are interchangeable with most 2 A ultrafast rectifier families.
FESB16DT-E3/81 - 200V 16A Ultrafast Rectifier TO-263AB | Vishay
The Vishay General Semiconductor FESB16DT-E3/81 is an ultrafast plastic rectifier rated at 200 V reverse voltage and 16 A average rectified forward current, housed in a surface-mount TO-263AB (D2PAK) package. It features a glass-passivated chip junction, a typical reverse recovery time of 35 ns, and a maximum forward voltage of 975 mV at 16 A, targeting high-frequency switching applications. Key features include a 35 ns reverse recovery time, low switching losses, high forward surge capability, and a forward voltage of 975 mV at full 16 A load. The glass-passivated die construction ensures long-term stability against humidity and contaminants, while the J-STD-020 MSL-1 rating simplifies board-level handling. The FESB16DT-E3/81 belongs to the ultrafast rectifier family, a subset of discrete power diodes engineered for high-frequency operation. Within the broader component taxonomy, ultrafast rectifiers sit under rectifier diodes, which fall under discrete semiconductors. Their primary role is to convert AC to DC in switch-mode power supplies while minimizing the reverse-recovery losses that limit switching frequency in standard recovery rectifiers. At the architecture level, the FESB16DT-E3/81 employs a single-junction diffused silicon die with a glass-passivated surface that suppresses surface leakage and improves high-temperature stability. The 35 ns reverse recovery figure, combined with low stored charge, allows operation at switching frequencies from 50 kHz to over 200 kHz without the efficiency penalties that plague 60-Hz standard recovery parts. The TO-263AB (D2PAK) tab provides a low thermal resistance path for the dissipated power. Typical applications include switch-mode power supplies (SMPS), freewheeling diodes in motor drives, DC/DC converters, inverters, and uninterruptible power supplies. The 16 A current rating and 200 V blocking voltage cover most 48 V telecom bus, 24 V industrial, and low-voltage three-phase rectified topologies. When designing with this part, ensure that the heatsink tab receives adequate copper area to keep the junction temperature below 150 C under worst-case continuous forward current. The 35 ns reverse recovery is fast enough for hard-switched PFC and forward converters, but a snubber may be required in high-dv/dt bridge configurations. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Sourcing data is current as of 2026-10-08, and all parametric figures are taken from Vishay's published specification.
FR107-B - 1A 1000V Fast Recovery Rectifier DO-41 | Rectron
The Rectron FR107-B is an axial-leaded 1.0 A fast recovery rectifier diode rated at 1000 V reverse voltage with a 150 ns reverse recovery time, housed in the industry-standard DO-41 (DO-204AC) through-hole package. Its combination of 1 A average forward current, 30 A non-repetitive peak surge current (IFSM), and 150 ns trr makes it a workhorse for line-frequency rectification and high-frequency freewheeling circuits. A fast recovery rectifier is a discrete semiconductor device designed to conduct current in one direction while switching from the conducting (forward) state to the blocking (reverse) state far faster than a standard 50 Hz rectifier. FR107-B belongs to the rectifier diode family within discrete semiconductors, sitting alongside general-purpose rectifiers (1N400x series), Schottky diodes, and ultrafast rectifiers. Its primary role is AC-to-DC conversion in switched-mode power supplies (SMPS), motor drive snubbers, and inductive load freewheel paths where the slow recovery of a 1N4007 would cause excessive switching loss or shoot-through. Key features include a low forward voltage drop of typically 1.3 V at 1 A (max 1.7 V), a peak surge capability of 30 A for 8.3 ms half-sine pulses, glass passivated die construction, and a molded epoxy body that meets UL 94V-0 flammability. The axial lead format simplifies PCB insertion and wave-soldering on through-hole boards. Operating junction temperature spans -55C to +150C, covering industrial and automotive underhood environments. Technically, the device uses a diffused PN junction with controlled minority carrier lifetime to achieve the 150 ns recovery specification without sacrificing surge ruggedness. The glass passivation layer eliminates surface instability and leakage drift, ensuring stable high-temperature reverse current below 5 uA at 25C and 50 uA at full rated voltage and temperature. Typical applications include switch-mode power supply output rectifiers, DC-DC converter freewheel diodes, inverter stage snubbers, and polarity protection in industrial controls. The 1000 V rating also supports 230 VAC line-rectified rails directly without derating. When designing with FR107-B, always verify that the switching frequency of the host converter is consistent with a 150 ns trr. Above approximately 100 kHz, an ultrafast (UF4007-class, 75 ns) or Schottky part is preferable. Reverse voltage margin of at least 20% should be applied for reliability. This page synthesizes distributor pricing, same-brand drop-in alternatives (FR107, FR157-B), cross-brand DO-41 equivalents from Diodes Incorporated and EVVO, application guidance, and a DO-41 pinout diagram - practical engineering context not found in the bare datasheet.
FR107-G - 1A 1000V Fast Recovery Rectifier DO-41 | Comchip
The Comchip Technology FR107-G is a 1 A, 1000 V fast-recovery axial-lead rectifier diode in a DO-41 (DO-204AL) through-hole package, designed as the industry-standard FR107 with a Comchip green-packaging (-G) suffix that denotes RoHS/lead-free compliance. It features a maximum repetitive peak reverse voltage (VRRM) of 1000 V, average rectified forward current (IO) of 1 A, and a forward surge current (IFSM) of 30 A over a single 8.3 ms half-sine pulse. Reverse recovery time (trr) is specified at 500 ns, making this part genuinely "fast-recovery" rather than a standard-recovery 1N4007-class rectifier, and that distinction matters in switch-mode power supply freewheeling and high-frequency rectification applications. A fast-recovery rectifier (often abbreviated FRR or FRD) is a discrete semiconductor diode whose minority-carrier lifetime has been intentionally shortened so that it ceases conduction quickly when reverse-biased. Within the broader taxonomy, FR107 sits as: fast-recovery rectifier -> recovery rectifier -> rectifier diode -> discrete semiconductor. Fast-recovery parts differ from standard-recovery parts (such as the 1N4007) by their deliberately reduced trr, and they differ from ultrafast-recovery parts (UF4007) only by trr value: 500 ns versus 75 ns. Fast-recovery rectifiers are widely used in 50/60 Hz line-frequency rectification, low-frequency switch-mode freewheeling, and DC output stages of offline power supplies where switching losses in the rectifier are tolerable but where reverse recovery at line frequency must not introduce audible noise or harmonic distortion. Key features of the FR107-G include a low forward voltage drop of 1.3 V at 1 A, glass-passivated junction construction that improves long-term stability and reverse-leakage performance, molded epoxy body rated UL 94V-0 for flame retardance, and axial leads compatible with through-hole wave soldering or insertion mounting. The part is lead-free and RoHS-compliant, and the -G suffix (Comchip convention) signals the green/lead-free finish as distinct from the legacy SnPb finish on the same die. Operating junction temperature range extends from -55 °C to +150 °C. Typical applications for the FR107-G include 50/60 Hz bridge rectifiers in linear and switched-mode power supplies, freewheeling diodes across inductive loads such as relay coils and solenoids, snubber diodes in flyback converters, and reverse-polarity protection circuits where 1 A continuous and 30 A peak surge ratings are sufficient. Designers also use FR107-family parts in low-cost DC adapters, battery chargers, and hobby/educational power-electronics kits. The DO-41 axial package, paired with the part's high surge capability, makes it a robust workhorse for general-purpose through-hole rectification. When designing with the FR107-G, verify that peak inverse voltage and case temperature stay within the datasheet envelope. The 30 A IFSM rating assumes a single 8.3 ms half-sine pulse; for repetitive surge operation, derate significantly. Use a clip-on heatsink or thermal compound only if your application sustains high average forward current, since the DO-41 body itself dissipates 3 W only with adequate lead cooling. Pair trr with your switching topology: FR107's 500 ns is acceptable for line-frequency and low-frequency SMPS freewheeling, but ultrafast 75 ns parts (UF4007) are required for >100 kHz hard-switched converters. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes sourced from manufacturer datasheets, Mouser/DigiKey listings, and parametric cross-references not consolidated in any single vendor catalog.