1ED3124MU12HXUMA1 vs 1EDI60N12AFXUMA1 Vergleich
Detaillierter Direktvergleich von 1ED3124MU12HXUMA1 von Infineon und 1EDI60N12AFXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ AktivInfineon
1EDI60N12AFXUMA1 - 1200V Isolated Gate Driver, 10A Source/9.4A Sink | Infineon
1EDI60N12AFXUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | 1ED3124MU12HXUMA1 | 1EDI60N12AFXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $2,21 |
| Product Type | Single-channel isolated gate driver IC | — |
| Manufacturer Family | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) | — |
| Peak Output Current (source/sink) | 14 A typical | — |
| Ausgangskonfiguration | Separate source and sink pins | — |
| Galvanic Isolation (rms) | 5.7 kV (UL 1577) | — |
| Working Voltage (continuous) | 1200 V | — |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us minimum | — |
| Propagation Delay (typ.) | 90 ns | 120 ns |
| UVLO Threshold | 10.5 V | — |
| Isolation Technology | Coreless transformer (CT) | — |
| Gehäuse | PG-DSO-8-66 (DSO-8 wide-body) | PG-DSO-8-51 (DSO-8) |
| Creepage Distance | >8 mm | — |
| Betriebstemperaturbereich | -40C to +125C | — |
| Target Switch Types | IGBT, power MOSFET, SiC MOSFET | — |
| Recommended Switch Class | Up to 2300 V IGBT / SiC modules | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL2 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Driver Configuration | — | Single high-side, galvanically isolated |
| Number of Channels | — | 1 |
| Isolation Type | — | Magnetic (coreless transformer) |
| Isolation Voltage | — | 1200 V working voltage |
| Maximum Output Voltage | — | 40 V |
| Source Current (typ.) | — | 10 A |
| Sink Current (typ.) | — | 9.4 A |
| Supply Voltage (VDD) | — | 3.1 V to 17 V |
| Input Logic Compatibility | — | 3.3 V and 5 V CMOS/TTL |
| Creepage Distance (min.) | — | 4 mm |
| Short-Circuit Clamping | — | Yes (separate sink/source outputs) |
| Betriebstemperatur | — | -40C to +125C |