1ED3124MU12HXUMA1 vs 1EDI60N12AFXUMA1 对比
详细并排对比 1ED3124MU12HXUMA1 出自 Infineon 和 1EDI60N12AFXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
1EDI60N12AFXUMA1 - 1200V Isolated Gate Driver, 10A Source/9.4A Sink | Infineon
1EDI60N12AFXUMA1 ✓ 量产中规格对比
| 参数 | 1ED3124MU12HXUMA1 | 1EDI60N12AFXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $2.21 |
| Product Type | Single-channel isolated gate driver IC | — |
| Manufacturer Family | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) | — |
| Peak Output Current (source/sink) | 14 A typical | — |
| 输出配置 | Separate source and sink pins | — |
| Galvanic Isolation (rms) | 5.7 kV (UL 1577) | — |
| Working Voltage (continuous) | 1200 V | — |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us minimum | — |
| Propagation Delay (typ.) | 90 ns | 120 ns |
| UVLO Threshold | 10.5 V | — |
| Isolation Technology | Coreless transformer (CT) | — |
| 封装 | PG-DSO-8-66 (DSO-8 wide-body) | PG-DSO-8-51 (DSO-8) |
| Creepage Distance | >8 mm | — |
| 工作温度范围 | -40C to +125C | — |
| Target Switch Types | IGBT, power MOSFET, SiC MOSFET | — |
| Recommended Switch Class | Up to 2300 V IGBT / SiC modules | — |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL2 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Driver Configuration | — | Single high-side, galvanically isolated |
| Number of Channels | — | 1 |
| Isolation Type | — | Magnetic (coreless transformer) |
| Isolation Voltage | — | 1200 V working voltage |
| Maximum Output Voltage | — | 40 V |
| Source Current (typ.) | — | 10 A |
| Sink Current (typ.) | — | 9.4 A |
| Supply Voltage (VDD) | — | 3.1 V to 17 V |
| Input Logic Compatibility | — | 3.3 V and 5 V CMOS/TTL |
| Creepage Distance (min.) | — | 4 mm |
| Short-Circuit Clamping | — | Yes (separate sink/source outputs) |
| 工作温度 | — | -40C to +125C |