1ED3124MU12HXUMA1 vs 1EDI60N12AFXUMA1 비교
다음의 상세 나란히 비교: 1ED3124MU12HXUMA1 제조: Infineon 및 1EDI60N12AFXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
1EDI60N12AFXUMA1 - 1200V Isolated Gate Driver, 10A Source/9.4A Sink | Infineon
1EDI60N12AFXUMA1 ✓ 활성사양 비교
| 파라미터 | 1ED3124MU12HXUMA1 | 1EDI60N12AFXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.89 | $2.21 |
| Product Type | Single-channel isolated gate driver IC | — |
| Manufacturer Family | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) | — |
| Peak Output Current (source/sink) | 14 A typical | — |
| 출력 구성 | Separate source and sink pins | — |
| Galvanic Isolation (rms) | 5.7 kV (UL 1577) | — |
| Working Voltage (continuous) | 1200 V | — |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us minimum | — |
| Propagation Delay (typ.) | 90 ns | 120 ns |
| UVLO Threshold | 10.5 V | — |
| Isolation Technology | Coreless transformer (CT) | — |
| 패키지 | PG-DSO-8-66 (DSO-8 wide-body) | PG-DSO-8-51 (DSO-8) |
| Creepage Distance | >8 mm | — |
| 동작 온도 범위 | -40C to +125C | — |
| Target Switch Types | IGBT, power MOSFET, SiC MOSFET | — |
| Recommended Switch Class | Up to 2300 V IGBT / SiC modules | — |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | MSL2 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 상태 | Compliant | Compliant |
| Driver Configuration | — | Single high-side, galvanically isolated |
| Number of Channels | — | 1 |
| Isolation Type | — | Magnetic (coreless transformer) |
| Isolation Voltage | — | 1200 V working voltage |
| Maximum Output Voltage | — | 40 V |
| Source Current (typ.) | — | 10 A |
| Sink Current (typ.) | — | 9.4 A |
| Supply Voltage (VDD) | — | 3.1 V to 17 V |
| Input Logic Compatibility | — | 3.3 V and 5 V CMOS/TTL |
| Creepage Distance (min.) | — | 4 mm |
| Short-Circuit Clamping | — | Yes (separate sink/source outputs) |
| 동작 온도 | — | -40C to +125C |