1ED3124MU12HXUMA1 vs 1EDI60N12AFXUMA1 Сравнение
Подробное сравнение бок о бок 1ED3124MU12HXUMA1 от Infineon и 1EDI60N12AFXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ АктивенInfineon
1EDI60N12AFXUMA1 - 1200V Isolated Gate Driver, 10A Source/9.4A Sink | Infineon
1EDI60N12AFXUMA1 ✓ АктивенСравнение характеристик
| Параметр | 1ED3124MU12HXUMA1 | 1EDI60N12AFXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,89 | $2,21 |
| Product Type | Single-channel isolated gate driver IC | — |
| Manufacturer Family | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) | — |
| Peak Output Current (source/sink) | 14 A typical | — |
| Выходная конфигурация | Separate source and sink pins | — |
| Galvanic Isolation (rms) | 5.7 kV (UL 1577) | — |
| Working Voltage (continuous) | 1200 V | — |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us minimum | — |
| Propagation Delay (typ.) | 90 ns | 120 ns |
| UVLO Threshold | 10.5 V | — |
| Isolation Technology | Coreless transformer (CT) | — |
| Корпус | PG-DSO-8-66 (DSO-8 wide-body) | PG-DSO-8-51 (DSO-8) |
| Creepage Distance | >8 mm | — |
| Диапазон рабочих температур | -40C to +125C | — |
| Target Switch Types | IGBT, power MOSFET, SiC MOSFET | — |
| Recommended Switch Class | Up to 2300 V IGBT / SiC modules | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | MSL2 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Статус RoHS | Compliant | Compliant |
| Driver Configuration | — | Single high-side, galvanically isolated |
| Number of Channels | — | 1 |
| Isolation Type | — | Magnetic (coreless transformer) |
| Isolation Voltage | — | 1200 V working voltage |
| Maximum Output Voltage | — | 40 V |
| Source Current (typ.) | — | 10 A |
| Sink Current (typ.) | — | 9.4 A |
| Supply Voltage (VDD) | — | 3.1 V to 17 V |
| Input Logic Compatibility | — | 3.3 V and 5 V CMOS/TTL |
| Creepage Distance (min.) | — | 4 mm |
| Short-Circuit Clamping | — | Yes (separate sink/source outputs) |
| Рабочая температура | — | -40C to +125C |