1ED44175N01BXTSA1 vs 1ED3124MC12HXUMA1 Vergleich
Detaillierter Direktvergleich von 1ED44175N01BXTSA1 von Infineon und 1ED3124MC12HXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1ED44175N01BXTSA1 - 25V 2.6A Low-Side IGBT Gate Driver | Infineon
1ED44175N01BXTSA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | 1ED44175N01BXTSA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,54 | $1,45 |
| Funktion | Low-side gate driver | — |
| Number of Channels | 1 | — |
| Gate Type | IGBT, MOSFET (single-channel) | — |
| Configuration | Non-inverting | High-side / Low-side (non-inverting) |
| Output Current (Source/Sink) | 2.6 A typical | — |
| Supply Voltage Range | Up to 25 V | — |
| Logic Input Compatibility | CMOS, LSTTL | — |
| Over-Current Protection (OCP) | Integrated (OCP pin) | — |
| FAULT Output | Yes (status reporting) | — |
| Enable-Pin | Yes | — |
| Rise/Fall Time | [DATA_NEEDED: rise/fall time ns] | — |
| Propagation Delay | [DATA_NEEDED: propagation delay ns] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Gehäuse | PG-SOT23-6-3 (6-lead) | PG-DSO-8 (DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| Technology | CMOS (latch-up immune) | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| RoHS-Status | Compliant | Compliant |
| Channel Type | — | Single-channel |
| Number of Drivers | — | 1 |
| Anzahl der Ausgänge | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Anstiegszeit | — | 15 ns |
| Abfallzeit | — | 30 ns |
| Betriebstemperatur | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |