1ED44175N01BXTSA1 vs 1ED3124MC12HXUMA1 Comparación
Comparación detallada lado a lado de 1ED44175N01BXTSA1 por Infineon y 1ED3124MC12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED44175N01BXTSA1 - 25V 2.6A Low-Side IGBT Gate Driver | Infineon
1ED44175N01BXTSA1 ✓ Activo
Comparación de especificaciones
| Parámetro | 1ED44175N01BXTSA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,54 | $1,45 |
| Función | Low-side gate driver | — |
| Number of Channels | 1 | — |
| Gate Type | IGBT, MOSFET (single-channel) | — |
| Configuration | Non-inverting | High-side / Low-side (non-inverting) |
| Output Current (Source/Sink) | 2.6 A typical | — |
| Supply Voltage Range | Up to 25 V | — |
| Logic Input Compatibility | CMOS, LSTTL | — |
| Over-Current Protection (OCP) | Integrated (OCP pin) | — |
| FAULT Output | Yes (status reporting) | — |
| Patilla de habilitación | Yes | — |
| Rise/Fall Time | [DATA_NEEDED: rise/fall time ns] | — |
| Propagation Delay | [DATA_NEEDED: propagation delay ns] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Encapsulado | PG-SOT23-6-3 (6-lead) | PG-DSO-8 (DSO-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | CMOS (latch-up immune) | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Estado RoHS | Compliant | Compliant |
| Channel Type | — | Single-channel |
| Number of Drivers | — | 1 |
| Número de salidas | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Tiempo de subida | — | 15 ns |
| Tiempo de bajada | — | 30 ns |
| Temperatura de funcionamiento | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |