1ED44175N01BXTSA1 vs 1ED3124MC12HXUMA1 对比

详细并排对比 1ED44175N01BXTSA1 出自 Infineon 和 1ED3124MC12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 量产中

规格对比

参数 1ED44175N01BXTSA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $1.45
功能 Low-side gate driver —
Number of Channels 1 —
Gate Type IGBT, MOSFET (single-channel) —
Configuration Non-inverting High-side / Low-side (non-inverting)
Output Current (Source/Sink) 2.6 A typical —
Supply Voltage Range Up to 25 V —
Logic Input Compatibility CMOS, LSTTL —
Over-Current Protection (OCP) Integrated (OCP pin) —
FAULT Output Yes (status reporting) —
使能引脚 Yes —
Rise/Fall Time [DATA_NEEDED: rise/fall time ns] —
Propagation Delay [DATA_NEEDED: propagation delay ns] —
工作温度范围 [DATA_NEEDED: operating temperature range] —
封装 PG-SOT23-6-3 (6-lead) PG-DSO-8 (DSO-8)
安装类型 Surface Mount Surface Mount
Technology CMOS (latch-up immune) —
MSL 等级 [DATA_NEEDED: MSL level] —
RoHS 状态 Compliant Compliant
Channel Type — Single-channel
Number of Drivers — 1
输出数量 — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升时间 — 15 ns
下降时间 — 30 ns
工作温度 — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

数据手册与资源

浏览全部产品 创建 BOM 获取报价