1EDI20I12MFXUMA1 vs 1ED3124MC12HXUMA1 Vergleich
Detaillierter Direktvergleich von 1EDI20I12MFXUMA1 von Infineon und 1ED3124MC12HXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDI20I12MFXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,84 | $1,45 |
| Funktion | Isolated single-channel high-side gate driver | — |
| Isolation Type | Galvanic (coreless transformer) | — |
| Number of Channels | 1 | — |
| Output Current (Source/Sink) | 2 A peak | — |
| Active Miller Clamp Current | 2 A | — |
| Maximum Operating Voltage (Switch side) | 1200 V | — |
| Propagation Delay (typ.) | 300 ns | — |
| Input Logic | Inverting / Non-inverting | — |
| Ausgangskonfiguration | Single high-side driver | — |
| Minimum Creepage | 4 mm | — |
| Short Circuit Protection | Yes (clamping) | — |
| Gehäuse | PG-DSO-8-51 (8-pin DSO, 4 mm creepage) | PG-DSO-8 (DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40 C to +125 C |
| Supply Voltage (Secondary) | [DATA_NEEDED: secondary supply voltage range] | — |
| CMTI | [DATA_NEEDED: common-mode transient immunity] | — |
| UVLO | Yes (secondary side) | — |
| RoHS-Status | Compliant | Compliant |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Anzahl der Ausgänge | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Anstiegszeit | — | 15 ns |
| Abfallzeit | — | 30 ns |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |