1EDI20I12MFXUMA1 vs 1ED3124MC12HXUMA1 Сравнение
Подробное сравнение бок о бок 1EDI20I12MFXUMA1 от Infineon и 1ED3124MC12HXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | 1EDI20I12MFXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,84 | $1,45 |
| Функция | Isolated single-channel high-side gate driver | — |
| Isolation Type | Galvanic (coreless transformer) | — |
| Number of Channels | 1 | — |
| Output Current (Source/Sink) | 2 A peak | — |
| Active Miller Clamp Current | 2 A | — |
| Maximum Operating Voltage (Switch side) | 1200 V | — |
| Propagation Delay (typ.) | 300 ns | — |
| Input Logic | Inverting / Non-inverting | — |
| Выходная конфигурация | Single high-side driver | — |
| Minimum Creepage | 4 mm | — |
| Short Circuit Protection | Yes (clamping) | — |
| Корпус | PG-DSO-8-51 (8-pin DSO, 4 mm creepage) | PG-DSO-8 (DSO-8) |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | -40 C to +125 C |
| Supply Voltage (Secondary) | [DATA_NEEDED: secondary supply voltage range] | — |
| CMTI | [DATA_NEEDED: common-mode transient immunity] | — |
| UVLO | Yes (secondary side) | — |
| Статус RoHS | Compliant | Compliant |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Количество выходов | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Время нарастания | — | 15 ns |
| Время спада | — | 30 ns |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |