1EDI60H12AHXUMA1 vs 1ED020I12B2XUMA1 Vergleich

Detaillierter Direktvergleich von 1EDI60H12AHXUMA1 von Infineon und 1ED020I12B2XUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDI60H12AHXUMA1 1ED020I12B2XUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,18 $2,65
Product Type Single-channel high-side gate driver IC —
Isolation Technology Galvanic isolation via coreless transformer Coreless transformer (magnetic coupling)
Isolation Voltage Rating 1200 V —
Number of Channels 1 1
Peak Source Current (typ.) 10.0 A —
Peak Sink Current (typ.) 9.4 A —
Ausgangskonfiguration Separate source and sink (SEP) outputs —
Input Compatibility CMOS / TTL logic —
Driven Device IGBT (and MOSFET / SiC compatible) —
Gehäuse PG-DSO-8-59 (DSO-8 with 8 mm creepage) PG-DSO-16-15 (300 mil wide-body DSO-16)
Montageart Surface Mount Surface Mount
Creepage Distance 8 mm 8 mm
Short-Circuit Protection Short-circuit clamping —
MSL-Level 2 (1 year floor life) MSL-3 (per JEDEC J-STD-020)
RoHS-Status Compliant —
Betriebstemperatur -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] -40 °C to +125 °C
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Voltage (Vrms) — 4500 Vrms
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Compliance — RoHS compliant

Datenblätter & Ressourcen

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