1EDI60H12AHXUMA1 vs 1ED020I12B2XUMA1 对比

详细并排对比 1EDI60H12AHXUMA1 出自 Infineon 和 1ED020I12B2XUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 1EDI60H12AHXUMA1 1ED020I12B2XUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.18 $2.65
Product Type Single-channel high-side gate driver IC —
Isolation Technology Galvanic isolation via coreless transformer Coreless transformer (magnetic coupling)
Isolation Voltage Rating 1200 V —
Number of Channels 1 1
Peak Source Current (typ.) 10.0 A —
Peak Sink Current (typ.) 9.4 A —
输出配置 Separate source and sink (SEP) outputs —
Input Compatibility CMOS / TTL logic —
Driven Device IGBT (and MOSFET / SiC compatible) —
封装 PG-DSO-8-59 (DSO-8 with 8 mm creepage) PG-DSO-16-15 (300 mil wide-body DSO-16)
安装类型 Surface Mount Surface Mount
Creepage Distance 8 mm 8 mm
Short-Circuit Protection Short-circuit clamping —
MSL 等级 2 (1 year floor life) MSL-3 (per JEDEC J-STD-020)
RoHS 状态 Compliant —
工作温度 -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] -40 °C to +125 °C
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Voltage (Vrms) — 4500 Vrms
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Compliance — RoHS compliant

数据手册与资源

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