1EDN7550BXTSA1 vs 2EDN7524GXTMA1 Vergleich

Detaillierter Direktvergleich von 1EDN7550BXTSA1 von Infineon und 2EDN7524GXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDN7550BXTSA1 2EDN7524GXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,59 $0,82
Driver Configuration Single-channel, high-side / low-side —
Input Type Non-inverting, truly differential —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Supply Voltage (VDD max) 84 V —
Minimum Input Pulse Width 29 ns —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay value] —
Input Common-Mode Range Up to 150 V —
Channel-to-Channel Matching 1.0 ns typ. —
Internal Regulator 4.7 V on input side —
Logic Input Compatibility TTL / CMOS —
Under-Voltage Lockout (UVLO) Yes —
Betriebs-Sperrschichttemperatur -40 °C to +150 °C —
Gehäuse PG-SOT23-6 (SOT-23-6) PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS-Status Compliant Compliant
Product Type — Low-side gate driver IC
Number of Channels — 2 (dual)
Drive Current (Source/Sink) — 5 A peak
Input Logic — Non-inverting, TTL / 3.3 V CMOS-compatible
Input Voltage Tolerance — -10 V to +20 V on logic pins
Supply Voltage (VCC) — 4.5 V to 20 V [DATA_NEEDED: exact range]
Propagation Delay — 20 ns typical [DATA_NEEDED: exact figure]
Channel-to-Channel Delay Matching — 1 ns
Anstiegszeit — 5 ns typical [DATA_NEEDED: exact test condition]
Abfallzeit — 5 ns typical [DATA_NEEDED: exact test condition]
Output Stage — Rail-to-rail, separate source/sink
UVLO Protection — Yes
Betriebstemperatur — -40 C to +125 C
Target Devices — Standard MOSFETs, superjunction MOSFETs, GaN HEMTs

Datenblätter & Ressourcen

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