1EDN7550BXTSA1 vs 2EDN7524GXTMA1 Comparaison
Comparaison détaillée côte à côte de 1EDN7550BXTSA1 par Infineon et 2EDN7524GXTMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
1EDN7550BXTSA1 - 4A/8A Single-Channel Gate Driver, SOT-23-6 | Infineon
1EDN7550BXTSA1 ✓ ActifInfineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ ActifComparaison des spécifications
| Paramètre | 1EDN7550BXTSA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,59 | $0,82 |
| Driver Configuration | Single-channel, high-side / low-side | — |
| Input Type | Non-inverting, truly differential | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 8 A | — |
| Supply Voltage (VDD max) | 84 V | — |
| Minimum Input Pulse Width | 29 ns | — |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay value] | — |
| Input Common-Mode Range | Up to 150 V | — |
| Channel-to-Channel Matching | 1.0 ns typ. | — |
| Internal Regulator | 4.7 V on input side | — |
| Logic Input Compatibility | TTL / CMOS | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| Température de jonction en fonctionnement | -40 °C to +150 °C | — |
| Boîtier | PG-SOT23-6 (SOT-23-6) | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Statut RoHS | Compliant | Compliant |
| Product Type | — | Low-side gate driver IC |
| Number of Channels | — | 2 (dual) |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | — | -10 V to +20 V on logic pins |
| Supply Voltage (VCC) | — | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| Temps de montée | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Temps de descente | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| Température de fonctionnement | — | -40 C to +125 C |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |